LOW TEMPERATURE PL CHARACTERIZATION OF LPEE GROWN GaSb AND GaInAsSb EPILAYERS
- 著者名:
- 掲載資料名:
- Infrared detectors : materials, processing, and devices : symposium held April 14-16, 1993, San Francisco, California, U.S.A.
- シリーズ名:
- Materials Research Society symposium proceedings
- シリーズ巻号:
- 299
- 発行年:
- 1994
- 開始ページ:
- 41
- 終了ページ:
- 46
- 総ページ数:
- 6
- 出版情報:
- Pittsburgh, PA: Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9781558991958 [1558991956]
- 言語:
- 英語
- 請求記号:
- M23500/299
- 資料種別:
- 国際会議録
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10
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The Properties of GaInAsSb/GaSb Heterostructure Grown by MOCVD and p-GaInAsSb/n-GaSb Photodiodes
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