1.

国際会議録
国際会議録
1. Improved Dielectric ind Interface Properties of 4H-SiC MOS Structures Processed by Oxide Deposition and N2O Annealing
Kimoto, T. ; Kawano, H. ; Noborio, M. ; Suda, J. ; Matsunami, H.
出版情報: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.987-990,  2006.  Stafa-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 527-529
2.

国際会議録
国際会議録
2. Short-Channel Effects in 4H-SiC MOSFETs
Noborio, M. ; Kanzaki, Y. ; Suda, J. ; Kimoto, T. ; Matsunami, H.
出版情報: Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy.  pp.821-824,  2005.  Uetikon-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 483-485
3.

国際会議録
国際会議録
3. Dose Designing fof High-Voltage 4H-SiC RESURF MOSFETs - Device Simulation and Fabrication
Kawano, H. ; Kimoto, T. ; Suda, J. ; Matsunami, H.
出版情報: Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy.  pp.809-812,  2005.  Uetikon-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 483-485
4.

国際会議録
国際会議録
4. Scanning Capacitance Microscopy of SiC Multiple PN Junction Structure Grown by Cold-Wall Chemical Vapor Deposition
Suda, J. ; Nakamura, S. ; Miura, M. ; Kimoto, T. ; Matsunami, H.
出版情報: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.659-662,  2002.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 389-393
5.

国際会議録
国際会議録
5. Epitaxial Growth of AlN on 6H-SiC (1120) by Molecular-Beam Epitaxy and Effect of Low-Temperature Buffer Layer
Onojima, N. ; Suda, J. ; Matsunami, H.
出版情報: GaN and related alloys - 2002 : symposium held December 2-6, Boston, Massachusetts, U.S.A..  pp.139-144,  2002.  Warrendale, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 743
6.

国際会議録
国際会議録
6. Towards High-Quality AlN/SiC Hetero-Interface by Controlling Initial Processes in Molecular-Beam Epitaxy
Onojima, N. ; Kaido, J. ; Suda, J. ; Kimoto, T. ; Matsunami, H.
出版情報: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.1569-1572,  2004.  Uetikon-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 457-460
7.

国際会議録
国際会議録
7. Heteroepitaxial Growth of Insulating AlN on 6H-SiC by MBE
Onojima, N. ; Suda, J. ; Matsunami, H.
出版情報: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1457-1460,  2002.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 389-393
8.

国際会議録
国際会議録
8. SiC Lateral Super-Junction Diodes Fabricated by Epitaxial Growth
Miura, M. ; Nakamura, S.-i. ; Suda, J. ; Kimoto, T. ; Matsunami, H.
出版情報: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.859-862,  2003.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 433-436
9.

国際会議録
国際会議録
9. 4H-SiC MOSFETs with a Novel Channel Structure (Sandwiched Channel MOSFET)
Kaido, J. ; Kimoto, T. ; Suda, J. ; Matsunami, H.
出版情報: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.1409-1412,  2004.  Uetikon-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 457-460
10.

国際会議録
国際会議録
10. High Channel Mobilities of MOSFETs on Highly-Doped 4H-SiC (11-20) Face by Oxidation in N2O Ambient
Kanzaki, Y. ; Kinbara, H. ; Kosugi, H. ; Suda, J. ; Kimoto, T. ; Matsunami, H.
出版情報: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.1429-1432,  2004.  Uetikon-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 457-460