1.

国際会議録
国際会議録
1. Composition Dependence of the Bandgap Energy of InxGa1-xN Layers on GaN (x｡？.15) Grown by Metalorganic Chemical Vapor Deposition
Wagner, J. ; Ramakrishnan, A. ; Behr, D. ; Maier, M. ; Herres, N. ; Kunzer, M. ; Obloh, H. ; Bachem, K-H.
出版情報: GaN and related alloys : symposium held November 30-December 4, 1998, Boston, Massachusetts, U.S.A..  pp.G2.8.1-,  1999.  Warrendale, Pa..  MRS - Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 537
2.

国際会議録
国際会議録
2. Determination of the Bonding Configurations of Carbon Acceptors in InxGa1-xAs and AlxGa1-xAs
Pritchard, R. E. ; Newman, R. C. ; Wagner, J. ; Maier, M. ; Mazuelas, A. ; Ploog, K. H. ; Lane, P. A. ; Martin, T.
出版情報: Strained layer epitaxy - materials processing and device applications : symposium held April 17-19, 1995, San Francisco, California, U.S.A..  pp.269-,  1995.  Pittsburgh, PA.  MRS - Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 379
3.

国際会議録
国際会議録
3. Influence of Mg doping profile on the electroluminescence properties of GaInN multiple-quantum-well light-emitting diodes
Stephan, T. ; Koehler, K. ; Maier, M. ; Kunzer, M. ; Schlotter, P. ; Wagner, J.
出版情報: Light-Emitting Diodes: Research, Manufacturing, and Applications VIII.  pp.118-126,  2004.  Bellingham, Wash..  SPIE - The International Society of Optical Engineering
シリーズ名: Proceedings of SPIE - the International Society for Optical Engineering
シリーズ巻号: 5366