1.

国際会議録
国際会議録
1. Electrical and Structural Properties of AlGaN/GaN Heterostructures Grown onto 8°-Off-Axis 4H-SiC Epilayers
F. Roccaforte ; G. Greco ; M.H. Weng ; F. Giannazzo ; V. Raineri
出版情報: Silicon Carbide and Related Materials 2010 : Selected, peer reviewed papers from the 8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), held in Oslo (Sundvolden Conference Centre), Norway, August 29th - September 2nd.  pp.808-811,  2011.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 679-680
2.

国際会議録
国際会議録
2. Electrical Activity of Structural Defects in 3C-SiC
J. Eriksson ; F. Roccaforte ; M.H. Weng ; F. Giannazzo ; J. Lorenzzi
出版情報: Silicon Carbide and Related Materials 2010 : Selected, peer reviewed papers from the 8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), held in Oslo (Sundvolden Conference Centre), Norway, August 29th - September 2nd.  pp.273-276,  2011.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 679-680
3.

国際会議録
国際会議録
3. Effect of Dopant Concentrations and Annealing Conditions on the Electrically Active Profiles and Lattice Damage in Al Implanted 4H-SiC
M.H. Weng ; F. Roccaforte ; F. Giannazzo ; S. Di Franco ; C. Bongiorno
出版情報: Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009.  pp.713-716,  2010.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 645-648
4.

国際会議録
国際会議録
4. On the Viability of Au/3C-SiC Schottky Barrier Diodes
J. Eriksson ; M.H. Weng ; F. Roccaforte ; F. Giannazzo ; S. Di Franco
出版情報: Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009.  pp.677-680,  2010.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 645-648
5.

国際会議録
国際会議録
5. Reliability of Thin Thermally Grown SiO2 on 3C-SiC Studied by Scanning Probe Microscopy
J. Eriksson ; M.H. Weng ; F. Roccaforte ; F. Giannazzo ; P. Fiorenza
出版情報: Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009.  pp.833-836,  2010.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 645-648