1.

国際会議録
国際会議録
1. High-Rate Rotated Epitaxy of 3C-SiC(111) on Si(110) Substrate for Qualified Epitaxial Graphene on Silicon
M. Suemitsu ; S. Sanbonsuge ; E. Saito ; M.H. Jung ; H. Fukidome
出版情報: Silicon carbide and related materials 2012 : selected, peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6,2012, St. Petersburg, Russian Federation.  pp.327-330,  2013.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 740-742
2.

国際会議録
国際会議録
2. Low-Temperature, Low-Pressure and Ultrahigh-Rate Growth of Single-Crystalline 3C-SiC on Si Substrate by ULP-CVD Using Organosilane
E. Saito ; S. Filimonov ; M. Suemitsu
出版情報: Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009.  pp.147-150,  2010.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 645-648