1.

国際会議録
国際会議録
1. Micropipe Dissociation through Thick n+ Buffer Layer Growth
M.F. MacMillan ; E.K. Sanchez ; M. Dudley ; Y. Chen ; M.J. Loboda
出版情報: Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007.  pp.167-170,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 600-603
2.

国際会議録
国際会議録
2. The Effect of 4H-SiC Substrate Surface Scratches on Chemical Vapor Deposition Grown Homo-Epitaxial Layer Quality
N. Zhang ; Y. Chen ; E.K. Sanchez ; D.R. Black ; M. Dudley
出版情報: Silicon carbide and related materials 2008 : selected peer reviewed papers from the 7th European Conference on Silicon Carbide and Related Materials, September 7-11 Barcelona, Spain.  pp.109-112,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 615-617
3.

国際会議録
国際会議録
3. Sense Determination of c-Axis Screw Dislocations in 4H-SiC
Y. Chen ; X.R. Huang ; G. Dhanaraj ; M. Dudley ; E.K. Sanchez
出版情報: Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007.  pp.297-300,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 600-603
4.

国際会議録
国際会議録
4. Nucleation of c-Axis Screw Dislocations at Substrate Surface Damage during 4H-Silicon Carbide Homo-Epitaxy
M. Dudley ; N. Zhang ; Y. Zhang ; B. Raghothamachar ; E.K. Sanchez
出版情報: Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009.  pp.295-298,  2010.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 645-648
5.

国際会議録
国際会議録
5. Analysis of Dislocation Behavior in Low Dislocation Density, PVT-Grown, Four-Inch Silicon Carbide Single Crystals
M. Dudley ; S. Byrappa ; H. Wang ; F. Wu ; Y. Zhang ; B. Raghothamachar ; G. Choi ; E.K. Sanchez ; D. Hansen ; R. Drachev ; M.J. Loboda
出版情報: Silicon Carbide 2010--materials, processing and devices : symposium held April 5-9, 2010, San Francisco, California.  pp.29-36,  2010.  Warrendale, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 1246