1.

国際会議録
国際会議録
1. SiCP Selective Epitaxial Growth in Recessed Source/Drain Regions yielding to Drive Current Enhancement in n-channel MOSFET
M. Bauer ; V. Machkaoutsan ; Y. Zhang ; D. Weeks ; J. Spear
出版情報: SiGe, Ge, and Related Compounds 3: Materials, Processing, and Devices.  pp.1001-1013,  2008.  Pennington, NJ.  Electrochemical Society
シリーズ名: ECS transactions
シリーズ巻号: 16(10)
2.

国際会議録
国際会議録
2. Tensile Strained Selective Silicon Carbon Alloys for Recessed Source Drain Areas of Devices
M. Bauer ; D. Weeks ; Y. Zhang ; V. Machkaoutsan
出版情報: SiGe and Ge, materials, processing, and devices.  pp.187-196,  2006.  Pennington, N.J..  Electrochemical Society
シリーズ名: ECS transactions
シリーズ巻号: 3(7)
3.

国際会議録
国際会議録
3. Throughput Considerations for In-Situ Doped Embedded Silicon Carbon Stressor Selectively Grown into Recessed Source Drain Areas of NMOS Devices
M. Bauer ; Y. Zhang ; D. Weeks ; P. Brabant ; J. Italiano
出版情報: Advanced gate stack, source/drain and channel engineering for Si-based CMOS 4 : new materials, processes and equipment.  pp.287-298,  2008.  Pennington, N.J..  Electrochemical Society
シリーズ名: ECS transactions
シリーズ巻号: 13(1)
4.

国際会議録
国際会議録
4. Defect Free Embedded Silicon Carbon Stressor Selectively Grown into Recessed Source Drain Areas of NMOS Devices
M. Bauer ; Y. Zhang ; D. Weeks ; V. Machkaoutsan ; S. Thomas
出版情報: Advanced gate stack, source/drain and channel engineering for Si-based CMOS 3 : new materials, processes and equipment.  pp.419-428,  2007.  Pennington, NJ.  Electrochemical Society
シリーズ名: ECS transactions
シリーズ巻号: 6(1)