1.

国際会議録
国際会議録
1. Interface defects of the new type detected by the noise method in SOI and SOS MOSFETs
Lukyanchikova, N. ; Petrichuk, M. ; Garbar, N. ; Simoen, E. ; Claeys, C.
出版情報: Proceedings of the Eighth International Symposium on Silicon-on-Insulator Technology and Devices.  pp.203-214,  1997.  Pennington, NJ.  Electrochemical Society
シリーズ名: Electrochemical Society Proceedings Series
シリーズ巻号: 97-23
2.

国際会議録
国際会議録
2. Back-gate induced noise overshoot in partially-depleted SOI MOSFETs
Lukyanchikova, N. ; Garbar, N. ; Smolanka, A. ; Simoen, E. ; Claeys, C.
出版情報: Science and technology of semiconductor-on-insulator structures and devices operating in a harsh environment.  pp.255-260,  2005.  Dordrecht.  Kluwer Academic Publishers
シリーズ名: NATO science series. Series 2, Mathematics, physics and chemistry
シリーズ巻号: 185
3.

国際会議録
国際会議録
3. Noise and Tunneling Through the 2.5 nm Gate Oxide in SOI MOSFETs
Lukyanchikova, N. ; Simoen, E. ; Mercha, A. ; Claeys, C.
出版情報: Advanced experimental methods for noise research in nanoscale electronic devices.  pp.129-136,  2004.  Dordrecht.  Kluwer Academic Publishers
シリーズ名: NATO science series. Series 2, Mathematics, physics and chemistry
シリーズ巻号: 151