1.

国際会議録
国際会議録
1. The Effect of TiSi2 Film Thickness and Growth on the Point Defect Perturbance in Si
Hemer, S.B. ; Jones, K.S. ; Gossman, H.-J. ; Tung, R.T. ; Poate, J.M. ; Luftman, H.S.
出版情報: Proceedings of the Fourth International Symposium on Process Physics and Modeling in Semiconductor Technology.  pp.337-347,  1996.  Pennington, NJ.  Electrochemical Society
シリーズ名: Electrochemical Society Proceedings Series
シリーズ巻号: 96-4
2.

国際会議録
国際会議録
2. Influence Of Vacuum Annealing on Native Si Point Defects
Gossmann, H.-J. ; Mogi, T.K. ; Rafferty, C.S. ; Stolk, P.A. ; Eaglesham, D.J. ; Luftman, H.S. ; Unterwald, F.C. ; Boone, T. ; Thompson, M.O. ; Poate, J.M.
出版情報: ULSI science and technology, 1995 : proceedings of the Fifth International Symposium on Ultra Large Scale Integration Science and Technology.  pp.177-186,  1995.  Pennington, NJ.  Electrochemical Society
シリーズ名: Electrochemical Society Proceedings Series
シリーズ巻号: 95-5