1.

国際会議録
国際会議録
1. SURFACE PROTECTION DURING PLASMA HYDROGENATION FOR ACCEPTOR PASSIVATION IN InPD
Lopata, J. ; Dautremont-Smith, W.C. ; Pearton, S.J. ; Lee, J.W. ; Ha, N.T. ; Luftman, H.S.
出版情報: Impurities, defects, and diffusion in semiconductors : bulk and layered structures : symposium held November 27-December 1, 1989, Boston, Massachusetts, U.S.A..  pp.501-510,  1990.  Pittsburgh, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 163
2.

国際会議録
国際会議録
2. CHARACTERISTICS OF DOPING AND DIFFUSION OF HEAVILY DOPED N AND P TYPE InP AND InGaAs EPITAXIAL LAYERS GROWN BY METAL ORGANIC CHEMICAL VAPOR DEPOSITION
Pinzone, C.J. ; Ha, N.T. ; Gerrard, N.D. ; Dupuis, R.D. ; Luftman, H.S.
出版情報: Impurities, defects, and diffusion in semiconductors : bulk and layered structures : symposium held November 27-December 1, 1989, Boston, Massachusetts, U.S.A..  pp.867-874,  1990.  Pittsburgh, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 163