1.

国際会議録
国際会議録
1. ELECTRON CYCLOTRON RESONANCE PLASMA ETCHING/CLEANING FOR Si DEVICE FABRICATION
Wan, Zhimin ; Yasuda, Tetsuji ; Lucovsky, Gerald ; Lamb, H. Henry
出版情報: Surface chemical cleaning and passivation for semiconductor processing.  pp.225-,  1993.  Pittsburgh, PA.  MRS - Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 315
2.

国際会議録
国際会議録
2. Controlled Nitrogen-Atom Incorporation at Si-SiO2 Interfaces in MIS Devices
Lee, David R. ; Parker, Christopher G. ; Hauser, John R. ; Lucovsky, Gerald
出版情報: Ultraclean semiconductor processing technology and surface chemical cleaning and passivation : Symposum held April 17-19, 1995, San Francisco, California, USA.  pp.243-,  1995.  Pittsburgh, PA.  MRS - Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 386
3.

国際会議録
国際会議録
3. Degradation And Silc Effects Of Rpecvd Sub-2.0Nm Oxide/Nitride (O/N) And Oxynitride Dielectrics Under Constant Current Stress
Lee, Yi-Mu ; Wu, Yider ; Hong, Joon Goo ; Lucovsky, Gerald
出版情報: Silicon materials - processing characterization and reliability : symposium held April 1-5, 2002, San Francisco, California, U.S.A..  pp.103-108,  2002.  Warrendale.  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 716
4.

国際会議録
国際会議録
4. The Structure of Plasma-Deposited and Annealed Pseudo-Binary ZrO2-SiO2 Alloys
Rayner, Gilbert ; Therrien, Jr., Robert ; Lucovsky, Gerald
出版情報: Gate stack and silicide issues in silicon processing : symposium held April 25-27, 2000, San Francisco, California, U.S.A..  pp.C1.3-,  2001.  Warrendale, PA.  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 611