Blank Cover Image

Growth and Characterization of GaAs Epitaxial Layers by MOCVD

著者名:
掲載資料名:
Compound semiconductor electronics and photonics : symposium held April 8-10, 1996, San Francisco, California, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
421
発行年:
1996
開始ページ:
281
出版情報:
Pittsburgh, Penn: MRS - Materials Research Society
ISSN:
02729172
ISBN:
9781558993242 [155899324X]
言語:
英語
請求記号:
M23500/421
資料種別:
国際会議録

類似資料:

1 国際会議録 Epitaxial GaAs Layers by MOCVD Process:Growth and Characterization

Modak,Prasanta, Hudait,Mantu Kumar, Krupanidhi,S.B.

SPIE-The International Society for Optical Engineering, Narosa
7 国際会議録 Molecular Beam Epitaxial Growth of Nonpolar a-plane InN/ GaN Heterostructures

Mohana K. Rajpalke, Thirumaleshwara N. Bhat, Basanta Roul, Mahesh Kumar, S.B. Krupanidhi

Materials Research Society
2 国際会議録 Electrical Properties of n- and p- type Doped Epitaxial GaAs Layers Grown by OMVPE

Prasanta Modak, Hudait,Mantu Kumar, Shyam Hardikar, Krupanidhi,S.B.

Narosa Publishing House
8 国際会議録 Growth and Characterization of GaAs Epitaxial Layers on Ge by Atmospheric Pressure MOVPE

Tyagi,R., Pal,R., Singh,M., Srinivasan,T., Agarwal,S.K., Pal,D., Bose,D.N., Maithani,M., Hussain,M.

Narosa Publishing House
3 国際会議録 Photoluminescence of Zn Doped and Si Doped GaAs Epitaxial Layers Grown by MOCVD

Hudait,M.K., Modak,P., Hardikar,S., Rao,K.S.R.K., Krupanidhi,S.B.

Narosa Publishing House
9 国際会議録 GROWTH AND CHARACTERIZATION OF GaAs-BASED HETEROSTRUCTURES ON Si BY MOCVD

Hobson, W.S., Pearton, S.J., Short, K.T., Jones, K.S., Vernon, S.M., Jacobson, D.C., Abernathy, C.R., Caruso, R.

Materials Research Society
4 国際会議録 MOCVD Epitaxy of GaAs/Ge Heterostructures

Krupanidhi,S.B., Hudait,M.K., Modak,P., Hardikar,S.

Narosa Publishing House
10 国際会議録 MBE GROWTH AND CHARACTERIZATION OF EPITAXIAL MnS AND ZnSe HETEROSTRUCTURES ON GaAs

Skromme, B. J., Zhang, Y., Liu, W., Parameshwaran, B., Smith, David J., Sivananthan, S.

MRS - Materials Research Society
5 国際会議録 Inerface Characterization of GaAs/Ge Heterostructure Grown by Metal-Organic Vapor-Phase Epitaxy

Krupanidhi,S.B., Hudait,M.K.

SPIE - The International Society for Optical Engineering
11 国際会議録 Growth and characterization of GaxIn1-xAs1-ySby epitaxial layers grown by LP-MOCVD [6029-38]

Wang J., Wang Y., Wang T., Yang S., Li X., Yin J., Sai X., Gao H.

SPIE - The International Society of Optical Engineering
6 国際会議録 Current Transport Study of Au/n-GaAs Schottky Diodes on Ge Substrate at Low Temperatures

Venkateswarlu,P., Hudait,M.K., Krupanidhi,S.B.

SPIE - The International Society for Optical Engineering
12 国際会議録 CHARACTERIZATION OF EPITAXIAL MBE AND MOCVD GaAs DOPED WITH DONORS OR ACCEPTORS USING FTIR SPECTROSCOPY

Murray, R., Newman, R. C., Nandhra, P. S., Beall, R. B., Harris, J. J., Wright, P. J.

Materials Research Society
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12