1.

国際会議録
国際会議録
1. X-ray Photoemission Spectromicroscopy of GaN and AlGaN
Lorusso, G. F. ; Solak, H. ; Cerrina, F. ; Underwood, J. H. ; Batson, P. J. ; Kim, Y. ; Cho, Y. ; Kisielowski, C. ; Krueger, J. ; Weber, E. R.
出版情報: Wide-bandgap semiconductors for high power, high frequency, and high temperature : symposium held April 13-15, 1998, San Francisco, California, U.S.A..  pp.393-,  1998.  Warrendale, Penn..  MRS - Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 512
2.

国際会議録
国際会議録
2. Properties of Homoepitaxially MBE-Grown GaN
Suski, T. ; Krueger, J. ; Kisielowski, C. ; Phatak, P. ; Leung, M. S. H. ; Liliental-Weber, Z. ; Gassmann, A. ; Newman, N. ; Rubin, M. D. ; Weber, E. R. ; Grzegory, I. ; Jun, J. ; Bockowski, M. ; Porowski, S. ; Helava, H. I.
出版情報: III-Nitride, SiC, and Diamond Materials for Electronic Devices : symposium held April, 1996, San Francisco, California, U.S.A..  pp.329-,  1996.  Pittsburgh, Pa..  MRS - Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 423
3.

国際会議録
国際会議録
3. Effect of N/Ga flux ratio in GaN buffer layer growth by MBE on (0001) sapphire on defect formation in the GaN main layer
Ruvimov, S. ; Liliental-Weber, Z. ; Washburn, J. ; Kim, Y. ; Sudhir, G. S. ; Krueger, J. ; Weber, E. R.
出版情報: Wide-bandgap semiconductors for high-power, high-frequency, and high temperature applications--1999 : symposium held April 5-8, 1999, San Francisco, California, U.S.A..  pp.295-,  1999.  Warrendale, PA.  MRS-Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 572