1.

国際会議録
国際会議録
1. The Role of Vacancies and Interstitials in Transient-Enhanced Diffusion of Arsenic Implanted Into Silicon
Venables, D. ; Krishnamoorthy, V. ; Gossmann, H-J. ; Lilak, A. ; Jones, K. S. ; Jacobson, D. C.
出版情報: Defects and diffusion in silicon processing : symposium held April 1-4, 1997, San Francisco, California, U.S.A..  pp.315-,  1997.  Pittsburg, Pa..  MRS - Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 469
2.

国際会議録
国際会議録
2. Enhanced Dissolution of Extrinsic Dislocation Loops in Silicon Annealed in NH3
Herner, S. B. ; Krishnamoorthy, V. ; Jones, K. S. ; Mogi, T. K. ; Gossmann, H-J.
出版情報: Defects in electronic materials II : symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A..  pp.157-,  1997.  Pittsburgh, Penn.  MRS - Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 442