1.

国際会議録
国際会議録
1. Experimental Determination of the Specific Positron Trapping Rates in Semiconductors
Krause-Rehberg,R. ; Polity,A. ; Abgarjan,Th.
出版情報: Positron annihilation : ICPA-10 : Proceedings of the 10th International Conference on Positron Annihilation, May 23-29, 1994, Beijing, China.  Part1  pp.427-430,  1995.  Aederlmannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 175-178
2.

国際会議録
国際会議録
2. Application of the Positron Lifetime Spectroscopy as a Method of Non-Destructive Testing
Somieski,B. ; Krause-Rehberg,R.
出版情報: Positron annihilation : ICPA-10 : Proceedings of the 10th International Conference on Positron Annihilation, May 23-29, 1994, Beijing, China.  Part2  pp.989-992,  1995.  Aederlmannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 175-178
3.

国際会議録
国際会議録
3. Vacancy Defects in Low-Temperature-Grown GaAs Observed by Continuous and Pulsed Slow Positrons
Gebauer,J. ; Krause-Rehberg,R. ; Eichler,S. ; Bauer-Kugelmann,W. ; Kogel,G. ; Triftshauser,W. ; Luysberg,M. ; Sohn,H. ; Weber,E.R.
出版情報: Positron annihilation, ICPA-11 : Proceedings of the 11th International Conference on Positron Annihilation, Kansas City, Missouri, USA, May 1997.  pp.204-208,  1997.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 255-257
4.

国際会議録
国際会議録
4. Positron annihtlation and scanning tunneling microscopy used to characterise defects in highly Si-doped GaAs.(Invited)
Gebauer,J. ; Krause-Rehberg,R. ; Domke,C. ; Ebert,Ph. ; Urban,K.
出版情報: Defects in semiconductors, icds-19 : proceedings of the 19th International Conference on Defects in Semiconductors, Aveiro, Portugal, July 1997.  Part2  pp.885-892,  1997.  Zurich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 258-263
5.

国際会議録
国際会議録
5. Fluence Dependence of the Formation of Open-Volume Defects in Silicon After Ion Implantation
Eichler,S. ; Borner,F. ; Gebauer,J. ; Krause-Rehberg,R.
出版情報: Positron annihilation, ICPA-11 : Proceedings of the 11th International Conference on Positron Annihilation, Kansas City, Missouri, USA, May 1997.  pp.472-474,  1997.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 255-257
6.

国際会議録
国際会議録
6. Positron Annihilation in Fine Powders and Fine-Grained Materials
Staab,T.E.M. ; Krause-Rehberg,R.
出版情報: Positron annihilation, ICPA-11 : Proceedings of the 11th International Conference on Positron Annihilation, Kansas City, Missouri, USA, May 1997.  pp.479-481,  1997.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 255-257
7.

国際会議録
国際会議録
7. Relation between Dislocation Motion and Formation of Intrinsic Point Defects
Leipner,H.S. ; Krause-Rehberg,R. ; Polity,A. ; Drost,Th. ; Alexander,H.
出版情報: Proceedings of the 17th International Conference on Defects in Semiconductors : ICDS-17, Gmunden, Austria, July 18-23, 1993.  Pt.3  pp.1589-1594,  1994.  Zurich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 143-147
8.

国際会議録
国際会議録
8. Investigations of Vacancy Defects in CdTe by Means of Positron Annihilation
Polity,A. ; Abgarjan,Th. ; Krause-Rehberg,R.
出版情報: Positron annihilation : ICPA-10 : Proceedings of the 10th International Conference on Positron Annihilation, May 23-29, 1994, Beijing, China.  Part1  pp.473-476,  1995.  Aederlmannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 175-178
9.

国際会議録
国際会議録
9. Generation of Point Defects during Plastic Deformation of InP
Leipner,H.S. ; Krause-Rehberg,R. ; Htibner,C.
出版情報: Proceedings of the 18th International Conference on Defects in Semiconductors : ICDS-18, Sendai, Japan, July 23-28, 1995.  pp.1267-1272,  1995.  Zurich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 196-201
10.

国際会議録
国際会議録
10. Hg Vacancies in Hg1-xCdxTe Studied by Positron Annihilation
Krause-Rehberg,R. ; Abgajan,Th. ; Polity,A. ; Neubert,M.
出版情報: Proceedings of the 18th International Conference on Defects in Semiconductors : ICDS-18, Sendai, Japan, July 23-28, 1995.  pp.1285-1290,  1995.  Zurich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 196-201
11.

国際会議録
国際会議録
11. Study of the Compensating Centres in GaAs:Te by Positron Annihilation
Krause-Rehberg,R. ; Dlubek,C. ; Polity,A.
出版情報: Proceedings of the 18th International Conference on Defects in Semiconductors : ICDS-18, Sendai, Japan, July 23-28, 1995.  pp.1649-1654,  1995.  Zurich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 196-201
12.

国際会議録
国際会議録
12. Study of Irradiation-Induced Vacancy Defects and Shallow Positron Traps in Silicon
Polity,A. ; Huth,S. ; Krause-Rehberg,R.
出版情報: Positron annihilation, ICPA-11 : Proceedings of the 11th International Conference on Positron Annihilation, Kansas City, Missouri, USA, May 1997.  pp.602-604,  1997.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 255-257
13.

国際会議録
国際会議録
13. Study of Vacancy Defects in II-VI Compouds by Means of Positron Annihilation
Krause-Rehberg,R. ; Drost,Th. ; Polity,A.
出版情報: Proceedings of the 17th International Conference on Defects in Semiconductors : ICDS-17, Gmunden, Austria, July 18-23, 1993.  Pt.1  pp.429-434,  1994.  Zurich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 143-147
14.

国際会議録
国際会議録
14. Study ofplastically deformed semiconductors by means of positron annihilation
Leipner,H.S. ; Hubner,C.G. ; Kruger,J. ; Krause-Rehberg,R.
出版情報: Defects in semiconductors, icds-19 : proceedings of the 19th International Conference on Defects in Semiconductors, Aveiro, Portugal, July 1997.  Part2  pp.981-986,  1997.  Zurich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 258-263
15.

国際会議録
国際会議録
15. Vacancy Type Defects in GaAs after Electron Irradiation Studied by Positron Lifetime Spectroscopy
Polity,A. ; Nagel,C. ; Krause-Rehberg,R.
出版情報: Proceedings of the 18th International Conference on Defects in Semiconductors : ICDS-18, Sendai, Japan, July 23-28, 1995.  pp.1249-1254,  1995.  Zurich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 196-201
16.

国際会議録
国際会議録
16. Equilibrium vacancies in Te-doped GaAs studied by positron annihilation
Gebauer,J. ; Krause-Rehberg,R. ; Laustnann,M. ; Lippold,G.
出版情報: Defects in semiconductors, icds-19 : proceedings of the 19th International Conference on Defects in Semiconductors, Aveiro, Portugal, July 1997.  Part2  pp.905-910,  1997.  Zurich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 258-263
17.

国際会議録
国際会議録
17. Sintering of Copper;Nickel and Tungsten Studied by Positron Lifetime Spectroscpoy
Staab,T. ; Hubner,Ch. ; Krause-Rehberg,R. ; Leipner,H.S. ; Zeiger,W. ; Vetter,B.
出版情報: Positron annihilation : ICPA-10 : Proceedings of the 10th International Conference on Positron Annihilation, May 23-29, 1994, Beijing, China.  Part1  pp.541-544,  1995.  Aederlmannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 175-178
18.

国際会議録
国際会議録
18. Vacancy Related Metastable Defects in III-V Semiconductors-A Study of the EL2 and DX Center by Positron Annihilation,Photoconductivity and Infrared Spectroscopy
Krause-Rehberg,R. ; Polity,A. ; Drost,Th. ; Roos,G. ; Pensl,G. ; Volm,D. ; Meyer,B.K.
出版情報: Proceedings of the 17th International Conference on Defects in Semiconductors : ICDS-17, Gmunden, Austria, July 18-23, 1993.  Pt.2  pp.1099-1104,  1994.  Zurich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 143-147
19.

国際会議録
国際会議録
19. Positron Lifetime Spectroscopy on Laser-Hardened Carbon Steels
Somieski,B. ; Meyendorf,N. ; Arloth,M. ; Krause-Rehberg,R.
出版情報: Positron annihilation, ICPA-11 : Proceedings of the 11th International Conference on Positron Annihilation, Kansas City, Missouri, USA, May 1997.  pp.584-586,  1997.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 255-257
20.

国際会議録
国際会議録
20. Deformation Induced Defects in GaAs-the Role of Dislocations
Hubner,C.G. ; Leipner,H.S. ; Krause-Rehberg,R.
出版情報: Positron annihilation, ICPA-11 : Proceedings of the 11th International Conference on Positron Annihilation, Kansas City, Missouri, USA, May 1997.  pp.497-499,  1997.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 255-257
21.

国際会議録
国際会議録
21. Morphologic defects in Cr3+:LiCaAIF6 crystals grown by the Czochralski method
Klimm,D. ; Seiranian,K. ; Reiche,P. ; Polity,A ; Krause-Rehberg,R.
出版情報: Solid state crystals, growth and characterization : 7-11 October 1996, Zakopane, Poland.  pp.35-41,  1997.  Bellingham, Wash..  SPIE-The International Society for Optical Engineering
シリーズ名: Proceedings of SPIE - the International Society for Optical Engineering
シリーズ巻号: 3178