2600 V, 12 A, 4H-SiC, Asymmetrical Gate Turn Off (GTO) Thyristor Development

2600 V, 12 A, 4H-SiC, Asymmetrical Gate Turn Off (GTO) Thyristor Development

著者名:

掲載資料名:

Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999

シリーズ名:

Materials science forum

シリーズ巻号:

338-342(2)

発行年:

2000

開始ページ:

1387

終了ページ:

1390

総ページ数:

4

出版情報:

Zuerich, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878498543 [0878498540]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014227
シリーズID:	PA00000012
会議名:	International Conference on Silicon Carbide and Related Materials : ICSCRM
回次:	1999
会議開催地:	Research Triangle Park, North Carolina, USA
会議開催年:	1999.10.10-1999.10.15

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1 国際会議録 Turn-off Performance of a 2.6 kV 4H-SiC Asymmetrical GTO Thyristor Agarwal, A.K., Ivanov, P.A., Levinshtein, M.E., Palmour, J.W., Rumyantsev, S.L., Ryu, S.H., Shur, M.S. Trans Tech Publications	7 国際会議録 A 10 kV 4H-SiC Bipolar Turn Off Thyristor (BTO) with Positive Temperature Coefficient of VF, Current Saturation Capability and Fast Switching Speed Q.C.J. Zhang, J. Richmond, C. Capell, A.K. Agarwal, J.W. Palmour Trans Tech Publications
2 国際会議録 4H-SiC Gate Turn-Off(GTO)Thyristor Development Casady,J.B., Agarwal,A.K., Rowland,L.B., Siergiej,R.R., Seshadri,S., Mani,S., Barrows,J., Piceone,D., Sanger,P.A., … Trans Tech Publications	8 国際会議録 Hybrid MOS-Gated Bipolar Transistor Using 4H-SiC BJT Tang, Y., Chow, T.P., Agarwal, A.K., Ryu, S.-H., Palmour, J.W. Trans Tech Publications
3 国際会議録 Dynamic Performance of 3.1 kV 4H-SiC Asymmetrical GTO Thyristors Agarwal, A.K., Ivanov, P.A., Levinshtein, M.E., Palmour, J.W., Rumyantsev, S.L. Trans Tech Publications	9 国際会議録 Hybrid MOS-Gated Bipolar Transistor Using 4H-SiC BJT Tang, Y., Chow, T.P., Agarwal, A.K., Ryu, S.-H., Palmour, J.W. Trans Tech Publications
4 国際会議録 Dynamic Performance of 3.1 kV 4H-SiC Asymmetrical GTO Thyristors Agarwal, A.K., Ivanov, P.A., Levinshtein, M.E., Palmour, J.W., Rumyantsev, S.L. Trans Tech Publications	10 国際会議録 Impact of Carrier Lifetime Enhancement Using High Temperature Oxidation on 15 kV 4H-SiC P-GTO Thyristor S.H. Ryu, D.J. Lichtenwalner, E. van Brunt, C. Capell, M.J. O'Loughlin, C. Jonas, Y. Lemma, J. Zhang, J. Richmond, A.A. … Trans Tech Publications
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6 国際会議録 A 1cm x 1cm, 5kV, 100A, 4H-SiC Thyristor Chip for High Current Modules Agarwal, A.K., Krishnaswami, S., Damsky, B., Richmond, J., Capell, C., Ryu, S.H., Palmour, J.W. Trans Tech Publications	12 国際会議録 Comparison of Turn-Off Strategies for SiC Thyristors S. Sundaresan, R. Singh Trans Tech Publications

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