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GROWTH OF HIGH-RESISTIVITY WURTZITE AND ZINCBLENDE STRUCTURE SINGLE CRYSTAL GaN BY REACTIVE-ION MOLECULAR BEAM EPITAXY

著者名:
掲載資料名:
Diamond, silicon carbide, and related wide bandgap semiconductors : symposium held November 27-December 1, 1989, Boston, Massachusetts, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
162
発行年:
1990
開始ページ:
525
終了ページ:
530
総ページ数:
6
出版情報:
Pittsburgh, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558990500 [155899050X]
言語:
英語
請求記号:
M23500/162
資料種別:
国際会議録

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