1.

国際会議録
国際会議録
1. Effect of Oxygen and Nitrogen Doping on Mechanical Properties of Silicon Using Nanoindentation
Karoui, A. ; Rozgonyi, G. ; Ciszek, T.
出版情報: Nanoscale materials and modeling -- relations among processing, microstructure and mechanical properties : symposium held April 13-16, 2004, San Francisco, California, U.S.A..  pp.123-128,  2004.  Warrendale, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 821
2.

国際会議録
国際会議録
2. Nonlinear Transient Finite Element Analysis of the Relaxation Mechanisms in Strained Silicon Grown on SiGe Virtual Substrate
Sahtout Karoui, F. ; Karoui, A. ; Rozgonyi, G.
出版情報: Thin films : stresses and mechanical properties XI : symposium held March 28-April 1, 2005, San Francisco, California, U.S.A..  pp.409-416,  2005.  Warrendale, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 875
3.

国際会議録
国際会議録
3. In-Situ Observations of Point Defect Generation and Complexing During Electron Beam Irradiation of Nitrogen Doped Czochralski Silicon
Stoddard, N. ; Karoui, A. ; Duscher, G. ; Kvit, A. ; Rozgonyi, G.
出版情報: High purity silicon VII : proceedings of the international symposium.  pp.347-356,  2002.  Pennington, N.J..  Electrochemical Society
シリーズ名: Electrochemical Society Proceedings Series
シリーズ巻号: 2002-20