THE CHANGING ENVIRONMENTS OF DOPANTS IN AMORPHOUS SILICON AT VARIOUS STAGES OF ANNEALING

THE CHANGING ENVIRONMENTS OF DOPANTS IN AMORPHOUS SILICON AT VARIOUS STAGES OF ANNEALING

著者名:

Dent, Andrew J.

掲載資料名:

Applications of synchrotron radiation techniques to materials science : symposium held April 12-15, 1993, San Francisco, California, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

307

発行年:

1993

開始ページ:

21

出版情報:

Pittsburgh, Pa.: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558992030 [1558992030]

言語:

英語

請求記号:

M23500/307

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00018923
シリーズID:	PA00000011
会議名:	Symposium on applications of synchrotron radiation techniques to materials science
回次:	1993
会議開催地:	San Francisco, CA, USA
会議開催年:	1993.04.12-1993.04.15

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