1.

国際会議録
国際会議録
1. Evolution of Basal Plane Dislocations during 4H-SiC Epitaxial Growth
R.E. Stahlbush ; B.L. VanMil ; K.X. Liu ; K.K. Lew ; R.L. Myers-Ward
出版情報: Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007.  pp.317-320,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 600-603
2.

国際会議録
国際会議録
2. Impact of 4H-SiC Substrate Defectivity on Epilayer Injected Carrier Lifetimes
R.L. Myers-Ward ; K.K. Lew ; B.L. VanMil ; R.E. Stahlbush ; K.X. Liu
出版情報: Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007.  pp.481-484,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 600-603