1.

国際会議録
国際会議録
1. Hall Effect and Admittance Measurements of n-Channel 6H-SiC MOSFETs
K.K. Lee ; M. Laube ; T. Ohshima ; H. Itoh ; G. Pensl
出版情報: Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006.  pp.791-794,  2007.  Stafa-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 556-557
2.

国際会議録
国際会議録
2. Current Transient Effect in N-Channel 6H-SiC MOSFET Induced by Heavy Ion Irradiation
K.K. Lee ; J.S. Laird ; T. Ohshima ; S. Onoda ; T. Hirao
出版情報: Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009.  pp.1013-1016,  2010.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 645-648