1.

国際会議録
国際会議録
1. Deep Levels Generated by Ion-Implantation in n- and p-Type 4H-SiC
K. Kawahara ; G. Alfieri ; T. Kimoto
出版情報: Silicon carbide and related materials 2008 : selected peer reviewed papers from the 7th European Conference on Silicon Carbide and Related Materials, September 7-11 Barcelona, Spain.  pp.365-368,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 615-617
2.

国際会議録
国際会議録
2. Effects of Thermal Oxidation on Deep Levels Generated by Ion Implantation into n-Type and p-Type 4H-SiC
K. Kawahara ; G. Alfieri ; T. Hiyoshi ; G. Pensl ; T. Kimoto
出版情報: Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009.  pp.651-654,  2010.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 645-648
3.

国際会議録
国際会議録
3. Reactive-Ion-Etching Induced Deep Levels Observed in n-Type and p-Type 4H-SiC
K. Kawahara ; G. Alfieri ; M. Krieger ; T. Kimoto
出版情報: Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009.  pp.759-762,  2010.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 645-648