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国際会議録

1. Dislocation Revelation in Highly Doped N-Type 4H-SiC by Molten KOH Etching with Na₂O₂ Additive

Y.Z. Yao ; Y. Ishikawa ; Y. Sugawara ; H. Saitoh ; K. Danno

出版情報:	Silicon Carbide and Related Materials 2010 : Selected, peer reviewed papers from the 8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), held in Oslo (Sundvolden Conference Centre), Norway, August 29th - September 2nd. pp.290-293, 2011. Aedermannsdorf, Switzerland. Trans Tech Publications
シリーズ名:	Materials science forum
シリーズ巻号:	679-680

国際会議録

2. Dislocation Analysis in Highly Doped n-Type 4H-SiC by Using Electron Beam Induced Current and KOH+Na₂O₂ Etching

Y.Z. Yao ; Y. Sugawara ; Y. Ishikawa ; H. Saitoh ; K. Danno

出版情報:	Silicon Carbide and Related Materials 2010 : Selected, peer reviewed papers from the 8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), held in Oslo (Sundvolden Conference Centre), Norway, August 29th - September 2nd. pp.294-297, 2011. Aedermannsdorf, Switzerland. Trans Tech Publications
シリーズ名:	Materials science forum
シリーズ巻号:	679-680

国際会議録

3. Characterization of Surface Defects of Highly N-Doped 4H-SiC Substrates that Produce Dislocations in the Epitaxial Layer

Y. Ishikawa ; Y. Sugawara ; H. Saitoh ; K. Danno ; Y. Kawai

出版情報:	Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009. pp.351-354, 2010. Aedermannsdorf, Switzerland. Trans Tech Publications
シリーズ名:	Materials science forum
シリーズ巻号:	645-648