1.

国際会議録
国際会議録
1. Diffusion and Gettering of Transition Metals in 4H-SiC
K. Danno ; H. Saitoh ; A. Seki ; T. Shirai ; H. Suzuki
出版情報: Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA.  pp.225-228,  2012.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 717-720
2.

国際会議録
国際会議録
2. Characterization of Dislocation Structures in Hexagonal SiC by Transmission Electron Microscopy
Y. Sugawara ; Y. Yao ; Y. Ishikawa ; K. Danno ; H. Suzuki
出版情報: Defects-recognition, imaging and physics in semiconductors XIV : selected, peer reviewed papers from the 14th International Conference on Defects-Recognition, Imaging and Physics in Semiconductors, September 25-29, 2011, Miyazaki, Japan.  pp.11-14,  2012.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 725
3.

国際会議録
国際会議録
3. Variation of Etch Pit Size by Screw Dislocation Tilt in 4H-SiC Wafer
Y. Ishikawa ; Y.Z. Yao ; Y. Sugawara ; K. Danno ; H. Suzuki
出版情報: Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA.  pp.367-370,  2012.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 717-720
4.

国際会議録
国際会議録
4. Different Dissociation Behavior of [11-20] and Non-[11-20] Basal Plane Dislocations in 4H-SiC under Electron Beam Irradiation
Y.Z. Yao ; Y. Sugawara ; Y. Ishikawa ; K. Danno ; H. Suzuki
出版情報: Defects-recognition, imaging and physics in semiconductors XIV : selected, peer reviewed papers from the 14th International Conference on Defects-Recognition, Imaging and Physics in Semiconductors, September 25-29, 2011, Miyazaki, Japan.  pp.45-48,  2012.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 725
5.

国際会議録
国際会議録
5. Characterization of Threading Edge Dislocation in 4H-SiC by X-Ray Topography and Transmission Electron Microscopy
Y. Sugawara ; Y.Z. Yao ; Y. Ishikawa ; K. Danno ; H. Suzuki
出版情報: Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan.  pp.366-369,  2014.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 778-780