1.

国際会議録
国際会議録
1. Phosphorus / Silicon Interstitial Annealing After Ion Implantation
Keys, P. H. ; Brindos, R. ; Krishnamoorthy, V. ; Puga-Lambers, M. ; Jones, K. S. ; Law, Mark E.
出版情報: Si front-end processing - physics and technology of dopant-defect interactions II : symposium held April 24-27, 2000, San Francisco, California, U.S.A..  pp.B6.6-,  2001.  Warrendale, PA.  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 610
2.

国際会議録
国際会議録
2. Effect of Energy and Dose on Transient-Enhanced Diffusion and Defect Microstructure in Low-Energy-High-Dose As+-Implanted Si
Krishnamoorthy, V. ; Venables, D. ; Moeller, K. ; Jones, K. S. ; Freer, B.
出版情報: Microstructure evolution during irradiation : symposium held December 2-5, 1996, Boston, Massachusetts, U.S.A..  pp.29-,  1997.  Pittsburgh, Pa..  MRS - Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 439
3.

国際会議録
国際会議録
3. The Role of Vacancies and Interstitials in Transient-Enhanced Diffusion of Arsenic Implanted Into Silicon
Venables, D. ; Krishnamoorthy, V. ; Gossmann, H-J. ; Lilak, A. ; Jones, K. S. ; Jacobson, D. C.
出版情報: Defects and diffusion in silicon processing : symposium held April 1-4, 1997, San Francisco, California, U.S.A..  pp.315-,  1997.  Pittsburg, Pa..  MRS - Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 469
4.

国際会議録
国際会議録
4. Effect of Implant Energy on Silicon Defect Evolution
Desroches, J. ; Krishnamoorthy, V. ; Jones, K. S. ; Jasper, C.
出版情報: Defects and diffusion in silicon processing : symposium held April 1-4, 1997, San Francisco, California, U.S.A..  pp.283-,  1997.  Pittsburg, Pa..  MRS - Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 469
5.

国際会議録
国際会議録
5. Enhanced Dissolution of Extrinsic Dislocation Loops in Silicon Annealed in NH3
Herner, S. B. ; Krishnamoorthy, V. ; Jones, K. S. ; Mogi, T. K. ; Gossmann, H-J.
出版情報: Defects in electronic materials II : symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A..  pp.157-,  1997.  Pittsburgh, Penn.  MRS - Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 442
6.

国際会議録
国際会議録
6. Effect of Oxygen Dose Variation on the SIMOX Microstructure
Datta, R. ; Krishnamoorthy, V. ; Allen, L. P. ; Chandonnet, R. ; Farley, M. ; Jones, K. S.
出版情報: Amorphous and crystalline insulating thin films--1996 : symposium held December 2-4, 1996, Boston, Massachusetts, U.S.A..  pp.207-,  1997.  Pittsburgh, Pa..  MRS - Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 446
7.

国際会議録
国際会議録
7. Reactivation of Acceptors and Trapping of Hydrogen in GaN/InGaN Double Heterostructures
Pearton, S. J. ; Bendi, S. ; Jones, K. S. ; Krishnamoorthy, V. ; Wilson, R. G. ; Ren, F. ; Karlicek, R. F., Jr. ; Stall, R. A.
出版情報: III-V nitrides : symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A..  pp.993-,  1997.  Pittsburgh, PA.  MRS - Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 449
8.

国際会議録
国際会議録
8. Effect of End-of-Range Defects, Arsenic Clustering, and Precipitation on Transient-Enhanced Diffusion in As+- Implanted Si
Krishnamoorthy, V. ; Venables, D. ; Moeller, K. ; Jones, K. S. ; Jackson, J.
出版情報: Defects and diffusion in silicon processing : symposium held April 1-4, 1997, San Francisco, California, U.S.A..  pp.401-,  1997.  Pittsburg, Pa..  MRS - Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 469
9.

国際会議録
国際会議録
9. Effect of Energy and Dose on Transient-Enhanced Diffusion and Defect Microstructure in Low-Energy High-Dose As+ Implanted Si
Krishnamoorthy, V. ; Venables, D. ; Moeller, K. ; Jones, K. S. ; Freer, B.
出版情報: Materials modification and synthesis by ion beam processing : symposium held December 2-5, 1996, Boston, Massachusetts, U.S.A..  pp.21-,  1997.  Pittsburgh, Pa..  MRS - Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 438
10.

国際会議録
国際会議録
10. Type II Dislocation Loops and Their Effect on Strain in Ion Implanted Silicon as Studied by High Resolution X-ray Diffraction
Thompson, R. H., Jr. ; Krishnamoorthy, V. ; Liu, J. ; Jones, K. S.
出版情報: Defect and impurity engineered semiconductors and devices : symposium held April 17-21, 1995, San Francisco, California, U.S.A..  pp.635-,  1995.  Pittsburgh, PA.  MRS - Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 378