1.

国際会議録
国際会議録
1. Structural Properties of Titanium-Nickel Films on Silicon Carbide Following High Temperature Annealing
Vassilevski, K.V. ; Nikitina, I.P. ; Horsfall, A.B. ; Wright, N.G. ; Johnson, C.M. ; Malhan, R.K. ; Yamamoto, T.
出版情報: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.871-874,  2006.  Stafa-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 527-529
2.

国際会議録
国際会議録
2. Analytical Modelling of I-V Characteristics for 4H-SiC Enhancement Mode VJFET
Bhatnagar, P. ; Horsfall, A.B. ; Wright, N.G. ; Johnson, C.M. ; Vassilevski, K.V. ; O'Neill, A.G.
出版情報: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.1195-1198,  2006.  Stafa-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 527-529
3.

国際会議録
国際会議録
3. Aluminum Corrosion at Systems of Engineered Cu Particles
Missert, N. ; Copeland, R.G. ; Wall, F.D. ; Johnson, C.M. ; Barbour, J.C. ; Kotula, P.
出版情報: Corrosion science : a retrospective and current status in honor of Robert P. Frankenthal : proceedings of the international symposium.  pp.307-313,  2002.  Pennington, NJ.  Electrochemical Society
シリーズ名: Electrochemical Society Proceedings Series
シリーズ巻号: 2002-13
4.

国際会議録
国際会議録
4. 4H-SiC Schottky Diodes with High On/Off Current Ratio
Vassilevski, K.V. ; Horsfall, A.B. ; Johnson, C.M. ; Wright, N.G. ; O'Neill, A.G.
出版情報: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1145-1148,  2002.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 389-393
5.

国際会議録
国際会議録
5. Optimisation of Implanted Guard-Ring Terminations in 4H-SiC Schottky Diodes
Horsfall, A.B. ; Vassilevski, K.V. ; Johnson, C.M. ; Wright, N.G. ; O'Neill, A.G. ; Gwilliam, R.M.
出版情報: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1149-1152,  2002.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 389-393
6.

国際会議録
国際会議録
6. TCAD Optimisation of 4H-SiC Channel-Doped MOSFET with P-Polysilicon Gate
Adachi, K. ; Johnson, C.M. ; Arai, K. ; Fukuda, K. ; Harada, S. ; Shinohe, T.
出版情報: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1085-1088,  2002.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 389-393
7.

国際会議録
国際会議録
7. Enhanced Dopant Diffusion Effects in 4H Silicon Carbide
Phelps, G.J. ; Wright, N.G. ; Chester, E.G. ; Johnson, C.M. ; O'Neill, A.G. ; Ortolland, S. ; Horsfall, A.B. ; Vassilevski, K. ; Gwilliam, R.M.
出版情報: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.855-858,  2002.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 389-393
8.

国際会議録
国際会議録
8. Comparison of Super-Junction Structures in 4H-SiC and Si for High Voltage Applications
Adachi, K. ; Johnson, C.M. ; Ohashi, H. ; Shinohe, T. ; Kinoshita, K. ; Arai, K.
出版情報: Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000.  pp.719-722,  2001.  Uetikon-Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 353-356
9.

国際会議録
国際会議録
9. Double Implanted Power MESFET Technology in 4H-SiC
Horsfall, A.B. ; Ortolland, S. ; Wright, N.G. ; Johnson, C.M. ; Knights, A.P.
出版情報: Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000.  pp.707-710,  2001.  Uetikon-Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 353-356
10.

国際会議録
国際会議録
10. The Effect of Implanted CL on the Pitting Behavior of Aluminum Thin Films
Serna, L.M. ; Johnson, C.M. ; Wall, F.D. ; Barbour, J.C.
出版情報: Corrosion in marine and saltwater environments II : proceedings of the international symposium.  pp.194-200,  2005.  Pennington, NJ.  Electrochemical Society
シリーズ名: Electrochemical Society Proceedings Series
シリーズ巻号: 2004-14
11.

国際会議録
国際会議録
11. Exploring the Relationship of Morphology and Structure to Pit Initiation in Cl-Implanted Al Thin Films
Missert, N. ; Copeland, R.G. ; Johnson, C.M. ; Kotula, P.G. ; Ellswick, D. ; Hren, J.J.
出版情報: Corrosion in marine and saltwater environments II : proceedings of the international symposium.  pp.187-193,  2005.  Pennington, NJ.  Electrochemical Society
シリーズ名: Electrochemical Society Proceedings Series
シリーズ巻号: 2004-14
12.

国際会議録
国際会議録
12. Super-Junction Device Forward Characteristics and Switched Power Limitations
Adachi, K. ; Johnson, C.M. ; Ohashi, H. ; Shinohe, T. ; Kinoshita, K. ; Arai, K.
出版情報: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1251-1254,  2002.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 389-393
13.

国際会議録
国際会議録
13. Physical Characterization of Residual Implant Damage in 4H-SiC Double Implanted Bipolar Technology
Wright, N.G. ; Johnson, C.M. ; O'Neill, A.G. ; Horsfall, A. ; Phelps, G.J. ; Adachi, K. ; Knights, A.P. ; Ortolland, S. ; Coleman, P.G. ; Burrows, C.P.
出版情報: Silicon carbide--materials, processing and devices : symposium held November 27-29, 2000, Boston, Massachusetts, U.S.A..  2001.  Warrendale, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 640
14.

国際会議録
国際会議録
14. The Effects of Chloride Implantation on Pit Initiation in Aluminum
Wall, F.D. ; Johnson, C.M. ; Barbour., I.C. ; Martinez, M.A.
出版情報: Critical factors in localized corrosion IV : a symposium in honor of the 65th birthday of Hans Böhni : proceedings of the international symposium.  pp.37-45,  2002.  Pennington, N.J..  Electrochemical Society
シリーズ名: Electrochemical Society Proceedings Series
シリーズ巻号: 2002-24
15.

国際会議録
国際会議録
15. Pit Initiation During Anodic Etching of Aluminum
Wall, F.D. ; Johnson, C.M. ; Barbour., I.C. ; Martinez, M.A.
出版情報: Critical factors in localized corrosion IV : a symposium in honor of the 65th birthday of Hans Böhni : proceedings of the international symposium.  pp.46-55,  2002.  Pennington, N.J..  Electrochemical Society
シリーズ名: Electrochemical Society Proceedings Series
シリーズ巻号: 2002-24
16.

国際会議録
国際会議録
16. Effect of Residual Damage on Carrier Transport Properties in a 4H-SiC Double Implanted Bipolar Junction Transistor
Ortolland, S. ; Wright, N.G. ; Johnson, C.M. ; Knights, A.P. ; Coleman, P.G. ; Burrows, C.P. ; Pidduck, A.J.
出版情報: Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000.  pp.567-570,  2001.  Uetikon-Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 353-356
17.

国際会議録
国際会議録
17. Optimisation of a 4H-SiC Enhancement Mode Power JFET
Horsfall, A.B. ; Johnson, C.M. ; Wright, N.G. ; O'Neill, A.G.
出版情報: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.777-780,  2003.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 433-436
18.

国際会議録
国際会議録
18. Characterisation of the High Temperature Performance of 4H-SiC Schottky Barrier Diodes
Blasciuc-Dimitriu, C. ; Horsfall, A.B. ; Vassilevski, K.V. ; Johnson, C.M. ; Wright, N.G. ; O'Neill, A.G.
出版情報: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.823-826,  2003.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 433-436
19.

国際会議録
国際会議録
19. A Simple Non-Destructive Technique to Detect Micropipes in Silicon Carbide
Morrison, D.J. ; Keir, A. ; Preston, I.H. ; Hilton, K.P. ; Uren, M.J. ; Johnson, C.M.
出版情報: Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000.  pp.303-306,  2001.  Uetikon-Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 353-356
20.

国際会議録
国際会議録
20. Implanted Bipolar Technology In 4H-SiC
Wright, Nick G. ; Johnson, C.M. ; O'Neil, Anthony G. ; Horsfall, Alton ; Ortolland, Sylvie ; Adachi, Kazuhiro ; Knights, Andrew P. ; Coleman, Paul G.
出版情報: Wide-bandgap electronic devices.  pp.T1.7-,  2001.  Warrendale, PA..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 622
21.

国際会議録
国際会議録
21. Benefits of High-k Dielectrics in 4H-SiC Trench MOSFETs
Wright, N.G. ; Poolamai, N. ; Vassilevski, K.V. ; Horsfall, A.B. ; Johnson, C.M.
出版情報: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.1433-1436,  2004.  Uetikon-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 457-460
22.

国際会議録
国際会議録
22. Low Voltage Silicon Carbide Zener Diode
Vassilevski, K.V. ; Zekentes, K. ; Horsfall, A.B. ; Johnson, C.M. ; Wright, N.G.
出版情報: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.1029-1032,  2004.  Uetikon-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 457-460
23.

国際会議録
国際会議録
23. Reactive Ion Etching of Silicon Carbide with Patterned Boron Implantation
Vassilevski, K.V. ; Hedley, J. ; Horsfall, A.B. ; Johnson, C.M. ; Wright, N.G.
出版情報: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.925-928,  2004.  Uetikon-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 457-460
24.

国際会議録
国際会議録
24. First Principles Derivation of Carrier Transport across Metal - SiC Barriers
Dimitriu, C.B. ; Horsfall, A.B. ; Wright, N.G. ; Johnson, C.M. ; Vassilevski, K.V. ; O'Neill, A.G.
出版情報: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.969-972,  2004.  Uetikon-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 457-460
25.

国際会議録
国際会議録
25. Edge Termination of SiC Schottky Diodes with Guard Rings Formed by High Energy Boron Implantation
Vassilevski, K.V. ; Horsfall, A.B. ; Johnson, C.M. ; Wright, N.G.
出版情報: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.989-992,  2004.  Uetikon-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 457-460
26.

国際会議録
国際会議録
26. Enhanced Dopant Diffusion Effects in 4H Silicon Carbide
Phelps, G.J. ; Wright, N.G. ; Chester, E.G. ; Johnson, C.M. ; O'Neill, A.G. ; Ortolland, S. ; Horsfall, A.B. ; Vassilevski, K. ; Gwilliam, R.M.
出版情報: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.855-858,  2002.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 389-393
27.

国際会議録
国際会議録
27. 4H-SiC Schottky Diodes with High On/Off Current Ratio
Vassilevski, K.V. ; Horsfall, A.B. ; Johnson, C.M. ; Wright, N.G. ; O'Neill, A.G.
出版情報: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1145-1148,  2002.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 389-393
28.

国際会議録
国際会議録
28. Optimisation of Implanted Guard-Ring Terminations in 4H-SiC Schottky Diodes
Horsfall, A.B. ; Vassilevski, K.V. ; Johnson, C.M. ; Wright, N.G. ; O'Neill, A.G. ; Gwilliam, R.M.
出版情報: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1149-1152,  2002.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 389-393
29.

国際会議録
国際会議録
29. TCAD Optimisation of 4H-SiC Channel-Doped MOSFET with P-Polysilicon Gate
Adachi, K. ; Johnson, C.M. ; Arai, K. ; Fukuda, K. ; Harada, S. ; Shinohe, T.
出版情報: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1085-1088,  2002.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 389-393
30.

国際会議録
国際会議録
30. Super-Junction Device Forward Characteristics and Switched Power Limitations
Adachi, K. ; Johnson, C.M. ; Ohashi, H. ; Shinohe, T. ; Kinoshita, K. ; Arai, K.
出版情報: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1251-1254,  2002.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 389-393