1.

国際会議録
国際会議録
1. Structural Properties of Titanium-Nickel Films on Silicon Carbide Following High Temperature Annealing
Vassilevski, K.V. ; Nikitina, I.P. ; Horsfall, A.B. ; Wright, N.G. ; Johnson, C.M. ; Malhan, R.K. ; Yamamoto, T.
出版情報: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.871-874,  2006.  Stafa-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 527-529
2.

国際会議録
国際会議録
2. Analytical Modelling of I-V Characteristics for 4H-SiC Enhancement Mode VJFET
Bhatnagar, P. ; Horsfall, A.B. ; Wright, N.G. ; Johnson, C.M. ; Vassilevski, K.V. ; O'Neill, A.G.
出版情報: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.1195-1198,  2006.  Stafa-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 527-529
3.

国際会議録
国際会議録
3. 4H-SiC Schottky Diodes with High On/Off Current Ratio
Vassilevski, K.V. ; Horsfall, A.B. ; Johnson, C.M. ; Wright, N.G. ; O'Neill, A.G.
出版情報: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1145-1148,  2002.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 389-393
4.

国際会議録
国際会議録
4. Optimisation of Implanted Guard-Ring Terminations in 4H-SiC Schottky Diodes
Horsfall, A.B. ; Vassilevski, K.V. ; Johnson, C.M. ; Wright, N.G. ; O'Neill, A.G. ; Gwilliam, R.M.
出版情報: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1149-1152,  2002.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 389-393
5.

国際会議録
国際会議録
5. Enhanced Dopant Diffusion Effects in 4H Silicon Carbide
Phelps, G.J. ; Wright, N.G. ; Chester, E.G. ; Johnson, C.M. ; O'Neill, A.G. ; Ortolland, S. ; Horsfall, A.B. ; Vassilevski, K. ; Gwilliam, R.M.
出版情報: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.855-858,  2002.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 389-393
6.

国際会議録
国際会議録
6. Double Implanted Power MESFET Technology in 4H-SiC
Horsfall, A.B. ; Ortolland, S. ; Wright, N.G. ; Johnson, C.M. ; Knights, A.P.
出版情報: Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000.  pp.707-710,  2001.  Uetikon-Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 353-356
7.

国際会議録
国際会議録
7. Physical Characterization of Residual Implant Damage in 4H-SiC Double Implanted Bipolar Technology
Wright, N.G. ; Johnson, C.M. ; O'Neill, A.G. ; Horsfall, A. ; Phelps, G.J. ; Adachi, K. ; Knights, A.P. ; Ortolland, S. ; Coleman, P.G. ; Burrows, C.P.
出版情報: Silicon carbide--materials, processing and devices : symposium held November 27-29, 2000, Boston, Massachusetts, U.S.A..  2001.  Warrendale, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 640
8.

国際会議録
国際会議録
8. Effect of Residual Damage on Carrier Transport Properties in a 4H-SiC Double Implanted Bipolar Junction Transistor
Ortolland, S. ; Wright, N.G. ; Johnson, C.M. ; Knights, A.P. ; Coleman, P.G. ; Burrows, C.P. ; Pidduck, A.J.
出版情報: Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000.  pp.567-570,  2001.  Uetikon-Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 353-356
9.

国際会議録
国際会議録
9. Optimisation of a 4H-SiC Enhancement Mode Power JFET
Horsfall, A.B. ; Johnson, C.M. ; Wright, N.G. ; O'Neill, A.G.
出版情報: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.777-780,  2003.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 433-436
10.

国際会議録
国際会議録
10. Characterisation of the High Temperature Performance of 4H-SiC Schottky Barrier Diodes
Blasciuc-Dimitriu, C. ; Horsfall, A.B. ; Vassilevski, K.V. ; Johnson, C.M. ; Wright, N.G. ; O'Neill, A.G.
出版情報: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.823-826,  2003.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 433-436