1.

国際会議録
国際会議録
1. High Voltage 4H-SiC BJTs with Deep Mesa Edge Termination
J.H. Zhang ; J.H. Zhao ; X.H. Wang ; X.Q. Li ; L. Fursin
出版情報: Silicon Carbide and Related Materials 2010 : Selected, peer reviewed papers from the 8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), held in Oslo (Sundvolden Conference Centre), Norway, August 29th - September 2nd.  pp.710-713,  2011.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 679-680
2.

国際会議録
国際会議録
2. 1600 V, 5.1 mΩ⋅cm² 4H-SiC BJT with a High Current Gain of β=70
J.H. Zhang ; P. Alexandrov ; J.H. Zhao
出版情報: Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007.  pp.1155-1158,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 600-603
3.

国際会議録
国際会議録
3. 4H-SiC Bipolar Junction Transistors with Graded Base Doping Profile
J.H. Zhang ; L. Fursin ; X.Q. Li ; X.H. Wang ; J.H. Zhao
出版情報: Silicon carbide and related materials 2008 : selected peer reviewed papers from the 7th European Conference on Silicon Carbide and Related Materials, September 7-11 Barcelona, Spain.  pp.829-832,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 615-617