1.

国際会議録
国際会議録
1. Effect of the Seed Polarity for High Quality 4H-SiC Crystal Grown on 6H-SiC Seed by PVT Method
I.G. Yeo ; T.W. Lee ; J.H. Park ; W.S. Yang ; H.B. Ryu
出版情報: Silicon Carbide and Related Materials 2010 : Selected, peer reviewed papers from the 8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), held in Oslo (Sundvolden Conference Centre), Norway, August 29th - September 2nd.  pp.44-47,  2011.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 679-680
2.

国際会議録
国際会議録
2. The Effect of Process Parameters on 4H-SiC Single Crystal Grown by a PVT Method
I.G. Yeo ; T.W. Lee ; J.H. Park ; W.S. Yang ; H.B. Ryu
出版情報: Silicon Carbide and Related Materials 2010 : Selected, peer reviewed papers from the 8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), held in Oslo (Sundvolden Conference Centre), Norway, August 29th - September 2nd.  pp.40-43,  2011.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 679-680
3.

国際会議録
国際会議録
3. Process and Crucible Modification for Growth of High Doped 4H-SiC Crystal with Larger Diameter
J.H. Park ; T.K. Yang ; I.S. Kim ; W.J. Lee ; I.G. Yeo
出版情報: Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA.  pp.17-20,  2012.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 717-720