Effect of NO Annealing on 6H- and 4H-SiC MOS Interface States

Effect of NO Annealing on 6H- and 4H-SiC MOS Interface States

著者名:

掲載資料名:

Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009

シリーズ名:

Materials science forum

シリーズ巻号:

645-648

発行年:

2010

パート:

1

開始ページ:

499

終了ページ:

502

総ページ数:

4

出版情報:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00054155
シリーズID:	PA00000012
会議名:	International Conference on Silicon Carbide and Related Materials
回次:	2009
会議開催地:	Nurnberg, Germany
会議開催年:	2009.10.11-2009.10.16
論文注記:	International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009

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1 国際会議録 Near-Interface Traps in n-type SiO₂/SiC MOS Capacitors from Energy-Resolved CCDLTS Alberto F. Basile, Sarit Dhar, John Rozen, Xudong Chen, John R. Williams, Leonard C. Feldman, Patricia M. Mooney Materials Research Society	7 国際会議録 Investigation of the Interface Quality and Reliability of 4H-SiC MOS Structure with NO and Forming Gas Annealing Treatment Z.Y. Peng, Y.Y. Wang, H.J. Shen, Y. Bai, Y.D. Tang Trans Tech Publications
2 国際会議録 Effects of N Incorporation on Electron Traps at SiO₂/SiC Interfaces A.F. Basile, S. Dhar, J.R. Williams, L.C. Feldman, P.M. Mooney Trans Tech Publications	8 国際会議録 High-Current, NO-Annealed Lateral 4H-SiC MOSFETs Das, M.K., Chung, G.Y., Williams, J.R., Saks, N.S., Lipkin, L.A., Palmour, J.W. Trans Tech Publications
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5 国際会議録 Interface Properties of 4H-SiC/SiO2 with MOS Capacitors and FETs Annealed in O2, N2O, NO and CO2 Wang, W., Banerjee, S., Chow, T.P., Gutmann, R.J., Issacs-Smith, T., Williams, J., Jones, K.A., Lelis, A., Tipton, W., … Trans Tech Publications	11 国際会議録 Sodium, Rubidium and Cesium in the Gate Oxides of SiC MOSFETs B.R. Tuttle, S. Dhar, S.H. Ryu, X. Zhu, J.R. Williams Trans Tech Publications
6 国際会議録 Improved 4H-SiC MOS Interfaces Produced via Two Independent Processes: Metal Enhanced Oxidation and 1300oC NO Anneal Das, M.K., Hull, B.A., Krishnaswami, S., Husna, F., Haney, S., Lelis, A.J., Scozzie, C.J., Scofield, J.D. Trans Tech Publications	12 国際会議録 Temperature Dependence of Inversion Layer Carrier Concentration and Hall Mobility in 4H-SiC MOSFETs S. Dhar, A.C. Ahyi, J.R. Williams, S.H. Ryu, A.K. Agarwal Trans Tech Publications

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