1.

国際会議録
国際会議録
1. Reactivation of Hydrogen-Passivated Aluminum Acceptors in p-type SiC
Hulsen, C. ; Achtziger, N. ; Reislohner, U. ; Witthuhn, W.
出版情報: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.929-932,  2000.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 338-342(2)
2.

国際会議録
国際会議録
2. Formation of Passivated Layers in p-Type SiC by Low Energy Ion Implantation of Hydrogen
Achtziger, N. ; Hulsen, C. ; Janson, M. S. ; Linnarsson, M. K. ; Svensson, B. G. ; Witthuhn, W.
出版情報: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.933-936,  2000.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 338-342(2)