1.

国際会議録
国際会議録
1. Nitrided Hafnium Silicate Film Formation by Sequential Process Using a Hot Wall Batch System and Its Application to MOS Transistor
Aoyama, Tomonori ; Torii, Kazuyoshi ; Mitsuhashi, Riichirou ; Maeda, Takeshi ; Kamiyama, Satoshi ; Horiuchi, Atsushi ; Kitajima, Hiroshi ; Arikado, Tsunetoshi
出版情報: Fundamentals of novel oxide/semiconductor interfaces : symposium held December 1-4, 2003, Boston, Massachusetts, U.S.A..  pp.273-278,  2004.  Warrendale, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 786
2.

国際会議録
国際会議録
2. Physical and Electrical Properties of Al2O3, HfO2, and Their Alloy Films Prepared by Atomic Layer Deposition for 65nm CMOS Gate Dielectric
Kawahara, Takaaki ; Torii, Kazuyoshi ; Fukuda, Seiichi ; Maeda, Takeshi ; Horiuchi, Atsushi ; Ito, Hiroyuki ; Muto, Akiyoshi ; Kato, Yoshitake ; Kitajima, Hiroshi
出版情報: Novel materials and processes for advances CMOS : symposium held December 2-4, 2002, Boston, Massachusetts, U.S.A..  pp.155-160,  2003.  Warrendale, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 745