Quantum-structure dependent excitonic carrier dynamics of InxGal-xN/GaN multi-quantum-wells (Invited Paper) [6121-04]
- 著者名:
Hong, S. ( Samsung Electro-Mechanics Co ., Ltd. (South Korea) ) Kim, Y. S. ( Samsung Electro-Mechanics Co ., Ltd. (South Korea) ) Yoon, Y.J. ( Samsung Electro-Mechanics Co ., Ltd. (South Korea) ) Park, J.S. ( Samsung Electro-Mechanics Co ., Ltd. (South Korea) ) Kim, B. K. ( Samsung Electro-Mechanics Co ., Ltd. (South Korea) ) Fomin, A. ( Samsung Electro-Mechanics Co ., Ltd. (South Korea) ) Lee, G. H. ( Samsung Electro-Mechanics Co ., Ltd. (South Korea) ) Kim, J.W. ( Samsung Electro-Mechanics Co ., Ltd. (South Korea) ) Cho, H.K. ( Sungkyunkwan Univ. (South Korea) ) Joo, T. ( Pohang Univ of Science and Technology (South Korea) ) - 掲載資料名:
- Gallium Nitride Materials and Devices
- シリーズ名:
- Proceedings of SPIE - the International Society for Optical Engineering
- シリーズ巻号:
- 6121
- 発行年:
- 2006
- 開始ページ:
- 612105
- 出版情報:
- Bellingham, Wash.: SPIE - The International Society of Optical Engineering
- ISSN:
- 0277786X
- ISBN:
- 9780819461636 [0819461636]
- 言語:
- 英語
- 請求記号:
- P63600/6121
- 資料種別:
- 国際会議録
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