1.

国際会議録
国際会議録
1. Electron Microscopy Investigation of the Role of Surface Steps in the Generation of Dislocations during MOCVD Growth of GaN on 4H-SiC
Bassim, N.D. ; Twigg, M.E. ; Mastro, M.A. ; Neudeck, P.G. ; Eddy, C.R.Jr. ; Henry, R.L. ; Holm, R.N. ; Powell, J.A. ; Trunek, A.J.
出版情報: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.1509-1512,  2006.  Stafa-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 527-529
2.

国際会議録
国際会議録
2. Reduction of Derects in GaN Epitaxial Films Grown Heteroepitaxially on SiC
Eddy, C.R.,Jr. ; Bassim, N.D. ; Mastro, M.A. ; Henry, R.L. ; Twigg, M.E. ; Holm, R.T. ; Culbertson, J.C. ; Neudeck, P.G. ; Powell, J.A. ; Trunek, A.J.
出版情報: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.1483-1488,  2006.  Stafa-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 527-529