1.

国際会議録
国際会議録
1. Reliability Evaluation of 4H-SiC JFETs Using I-V Characteristics and Low Frequency Noise
H.K. Chan ; R.C. Stevens ; J.P. Goss ; N.G. Wright ; A.B. Horsfall
出版情報: Silicon carbide and related materials 2012 : selected, peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6,2012, St. Petersburg, Russian Federation.  pp.934-937,  2013.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 740-742
2.

国際会議録
国際会議録
2. Low Frequency Noise in 4H-SiC Lateral JFET Structures
H.K. Chan ; R.C. Stevens ; J.P. Goss ; N.G. Wright ; A.B. Horsfall
出版情報: Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA.  pp.473-476,  2012.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 717-720
3.

国際会議録
国際会議録
3. Electrical Stability Impact of Gate Oxide in Channel Implanted SiC NMOS and PMOS Transistors
M.I. Idris ; M.H. Weng ; H.K. Chan ; A.E. Murphy ; D.A. Smith ; R.A.R. Young ; E.P. Ramsay ; D.T. Clark ; N.G. Wright ; A.B. Horsfall
出版情報: Silicon Carbide and Related Materials 2016.  pp.513-516,  2017.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 897