1.

国際会議録
国際会議録
1. Development of High Growth Rate SiC Epi-Reactor with Controlled Thermal Gradient
M. Ito ; H. Tsuchida ; I. Kamata ; L. Storasta
出版情報: Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006.  pp.81-84,  2007.  Stafa-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 556-557
2.

国際会議録
国際会議録
2. Advances in Fast Epitaxial Growth of 4H-SiC and Defect Reduction
H. Tsuchida ; I. Kamata ; M. Ito ; T. Miyazawa ; H. Uehigashi
出版情報: Silicon Carbide and Related Materials 2015 : [ICSCRM 2015] : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy.  pp.119-124,  2016.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 858
3.

国際会議録
国際会議録
3. Evaluation of Long Carrier Lifetimes in Very Thick 4H-SiC Epilayers
T. Miyazawa ; M. Ito ; H. Tsuchida
出版情報: Silicon Carbide and Related Materials 2010 : Selected, peer reviewed papers from the 8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), held in Oslo (Sundvolden Conference Centre), Norway, August 29th - September 2nd.  pp.197-200,  2011.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 679-680
4.

国際会議録
国際会議録
4. Fast Epitaxial Growth of 4H-SiC and Analysis of Defect Transfer
H. Tsuchida ; M. Ito ; I. Kamata ; M. Nagano
出版情報: Silicon carbide and related materials 2008 : selected peer reviewed papers from the 7th European Conference on Silicon Carbide and Related Materials, September 7-11 Barcelona, Spain.  pp.67-72,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 615-617
5.

国際会議録
国際会議録
5. Evolution of Fast 4H-SiC CVD Growth and Defect Reduction Techniques
H. Tsuchida ; I. Kamata ; M. Ito ; T. Miyazawa ; N. Hoshino
出版情報: Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan.  pp.85-90,  2014.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 778-780
6.

国際会議録
国際会議録
6. Low-Pressure Fast Growth and Characterization of 4H-SiC Epilayers
H. Tsuchida ; M. Ito ; I. Kamata ; M. Nagano ; T. Miyazawa
出版情報: Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009.  pp.77-82,  2010.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 645-648
7.

国際会議録
国際会議録
7. Development of a High Rate 4H-SiC Epitaxial Growth Technique Achieving Large-Area Uniformity
M. Ito ; L. Storasta ; H. Tsuchida
出版情報: Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007.  pp.111-114,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 600-603