Comparison Of Low Temperature Growth Of Si Thin Films On Amorphous Substrates By MBE And PECVD Methods

Comparison Of Low Temperature Growth Of Si Thin Films On Amorphous Substrates By MBE And PECVD Methods

著者名:

AnnaSelvan, J. A.

掲載資料名:

Amorphous and heterogeneous silicon thin films - 2000 : symposium held April 24-28, 2000, San Francisco, California, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

609

発行年:

2001

開始ページ:

A19.4

出版情報:

Warrendale: Materials Research Society

ISSN:

02729172

ISBN:

9781558995178 [155899517X]

言語:

英語

請求記号:

M23500/609

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014197
シリーズID:	PA00000011
会議名:	Symposium on amorphous and heterogeneous silicon thin films
回次:	2000
会議開催地:	San Francisco, CA, USA
会議開催年:	2000.04.24-2000.04.28

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