1.

国際会議録
国際会議録
1. CURRICULUM VITAE OF OXIDE PRECIPITATES: FROM NUCLEATION DURING CRYSTAL GROWTH TO THEIR FINAL DESTINATION IN PROCESSED WAFERS
Kissinger, G. ; Vanhellemont, J. ; Lambert, U. ; Dornberger, E. ; Sorge, R. ; Morgenstern, G. ; Grabolla, T. ; Graef, D. ; von Ammon, W. ; Wagner, P. ; Richter, H.
出版情報: Silicon materials science and technology : proceedings of the Eighth International Symposium on Silicon Materials Science and Technology.  pp.1095-1112,  1998.  Pennington, NJ.  Electrochemical Society
シリーズ名: Electrochemical Society Proceedings Series
シリーズ巻号: 98-1(2)
2.

国際会議録
国際会議録
2. SIMULATION OF NON-UNIFORM GROWN-IN VOID DISTRIBUTIONS IN CZOCHRALSKI IN SILICON CRYSTAL
Dornberger, E. ; Esfandyari, J. ; Vanhellemont, J. ; Graef, D. ; Lambert, U. ; Dupret, F. ; von Ammon, W.
出版情報: Silicon materials science and technology : proceedings of the Eighth International Symposium on Silicon Materials Science and Technology.  pp.490-502,  1998.  Pennington, NJ.  Electrochemical Society
シリーズ名: Electrochemical Society Proceedings Series
シリーズ巻号: 98-1(1)
3.

国際会議録
国際会議録
3. GATE OXIDE RELATED BULK PROPERTIES OF OXYGEN DOPED FLOATING ZONE AND CZOCHRALSKI SILICON
Ammon, W.v. ; Ehlert, A. ; Lambert, U. ; Graef, D. ; Brohl, M. ; Wagner, P.
出版情報: Proceedings of the Seventh International Symposium on Silicon Materials Science and Technology.  pp.136-147,  1994.  Pennington, NJ.  Electrochemical Society
シリーズ名: Electrochemical Society Proceedings Series
シリーズ巻号: 1994-10
4.

国際会議録
国際会議録
4. Oxygen Precipitation and Stacking Fault Formation in Wafers with a Transition from Vacancy-Rich to Interstitial-Rich
Kissinger, G. ; Morgenstern, G. ; Grabolla, T. ; Richter, H. ; Vanhellemont, J. ; Lambert, U. ; Graef, D.
出版情報: Proceedings of the Fifth International Symposium on High Purity Silicon V.  pp.158-169,  1998.  Pennington, NJ.  Electrochemical Society
シリーズ名: Electrochemical Society Proceedings Series
シリーズ巻号: 98-13
5.

国際会議録
国際会議録
5. Investigation of crystal defects in as-grown and processed silicon wafers and heteroepitaxial layers by infrared light scattering tomography
Kissinger, G. ; Vanhellemont, J. ; Graef, D. ; Zulehner, W. ; Claeys, C. ; Richter, H.
出版情報: ALTECH 95 : analytical techniques for semiconductor materials and process characterization II : proceedings of the Satellite Symposium to ESSDERC 95, The Hague, The Netherlands.  pp.156-164,  1995.  Pennington, NJ.  Electrochemical Society
シリーズ名: Electrochemical Society Proceedings Series
シリーズ巻号: 95-30
6.

国際会議録
国際会議録
6. High-temperature annealed silicon wafers
Graef, D. ; Wahlich, R. ; Krottenthaler, P. ; Feijoo, D. ; Lambert, U ; Wagner, P.
出版情報: Proceedings of the Symposium on Crystalline Defects and Contamination, their Impact and Control in Device Manufacturing II.  pp.18-31,  1997.  Pennington, NJ.  Electrochemical Society
シリーズ名: Electrochemical Society Proceedings Series
シリーズ巻号: 97-22
7.

国際会議録
国際会議録
7. Grown-in oxide precipitate nuclei in Czochralski silicon substrates and their role in device processing
Kissinger, G. ; Grabolla, T. ; Morgenstern, G. ; Richter, H. ; Graef, D. ; Vanhellemont, J. ; Lambert, U. ; von Ammon, W.
出版情報: Proceedings of the Symposium on Crystalline Defects and Contamination, their Impact and Control in Device Manufacturing II.  pp.74-87,  1997.  Pennington, NJ.  Electrochemical Society
シリーズ名: Electrochemical Society Proceedings Series
シリーズ巻号: 97-22
8.

国際会議録
国際会議録
8. D-defects and metal-related flow patterns
Kissinger, G. ; Morgenstern, G. ; Richter, H. ; Vanhellemont, J. ; Graef, D. ; Lambert, U. ; von Ammon, W. ; Wagner, P.
出版情報: Proceedings of the Symposium on Crystalline Defects and Contamination, their Impact and Control in Device Manufacturing II.  pp.32-39,  1997.  Pennington, NJ.  Electrochemical Society
シリーズ名: Electrochemical Society Proceedings Series
シリーズ巻号: 97-22
9.

国際会議録
国際会議録
9. Simulation of grown-in voids in Czochralski silicon crystals
Dornberger, E. ; Esfandyari, J. ; Graef, D. ; Vanhellemont, J. ; Lambert, U. ; Dupret, F. ; von Ammon, W.
出版情報: Proceedings of the Symposium on Crystalline Defects and Contamination, their Impact and Control in Device Manufacturing II.  pp.40-49,  1997.  Pennington, NJ.  Electrochemical Society
シリーズ名: Electrochemical Society Proceedings Series
シリーズ巻号: 97-22
10.

国際会議録
国際会議録
10. Recent Progress in Understanding Oxygen Precipitation in Silicon
Vanhellemont, J. ; Esfandyari, J. ; Obermeier, G. ; Dornberger, E. ; Graef, D. ; Lambert, U. ; Kissinger, G.
出版情報: Proceedings of the Fifth International Symposium on High Purity Silicon V.  pp.101-124,  1998.  Pennington, NJ.  Electrochemical Society
シリーズ名: Electrochemical Society Proceedings Series
シリーズ巻号: 98-13