1.

国際会議録
国際会議録
1. The Effect of Hydrogen on the Molecular-Beam-Epitaxy Growth of GaN on Sapphire Under Ga-Rich Conditions
Buczkowski, S. L. ; Yu, Zhonghai ; Richards-Babb, M. ; Giles, N. C. ; Romano, L. T. ; Myers, T. H.
出版情報: III-V nitrides : symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A..  pp.197-,  1997.  Pittsburgh, PA.  MRS - Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 449
2.

国際会議録
国際会議録
2. Hydrogenation of Undoped and Nitrogen-Doped CdTe and ZnSe Grown by Molecular-Beam Epitaxy
Hirsch, L. S. ; Setzler, S. D. ; Ptak, A. J. ; Giles, N. C. ; Myers, T. H.
出版情報: Hydrogen in semiconductors and metals : symposium held April 13-17, 1998, San Francisco, California, U.S.A..  pp.263-,  1998.  Warrendale, Penn..  MRS - Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 513
3.

国際会議録
国際会議録
3. A Comparison of Magnesium and Beryllium Acceptors in GaN Grown by rf-Plasma Assisted Molecular Beam Epitaxy
Ptak, A. J. ; Myers, T. H. ; Wang, Lijun ; Giles, N. C. ; Moldovan, M. ; Cunha, C.R. Da ; Hornak, L. A. ; Tian, C. ; Hockett, R. A. ; Mitha, S. ; Lierde, P. Van
出版情報: GaN and related alloys - 2000 : symposium held November 27-December 1, 2000, Boston, Massachusetts, U.S.A..  2001.  Warrendale, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 639
4.

国際会議録
国際会議録
4. Photoluminescence and Electron Paramagnetic Resonance of Nitrogen-Doped Zinc Selenide Epilayers
Moldovan, M. ; Setzler, S. D. ; Yu, Z. ; Myers, T. H. ; Halliburton, L. E. ; Giles, N. C.
出版情報: Defects in electronic materials II : symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A..  pp.555-,  1997.  Pittsburgh, Penn.  MRS - Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 442