1.

国際会議録
国際会議録
1. Photoluminescence and EPR of phosphorus vacancies in ZnGeP2
Moldovan, M. ; Stevens, K. T. ; Halliburton, L. E. ; Schunemann, P. G. ; Pollak, T. M. ; Setzler, S. D. ; Giles, N. C.
出版情報: Infrared applications of semiconductors III : symposium held November 29-December 2, 1999, Boston, Massachusetts, U.S.A..  pp.445-,  2000.  Warrendale, Pa..  MRS-Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 607
2.

国際会議録
国際会議録
2. A Comparison of Magnesium and Beryllium Acceptors in GaN Grown by rf-Plasma Assisted Molecular Beam Epitaxy
Ptak, A. J. ; Myers, T. H. ; Wang, Lijun ; Giles, N. C. ; Moldovan, M. ; Cunha, C.R. Da ; Hornak, L. A. ; Tian, C. ; Hockett, R. A. ; Mitha, S. ; Lierde, P. Van
出版情報: GaN and related alloys - 2000 : symposium held November 27-December 1, 2000, Boston, Massachusetts, U.S.A..  2001.  Warrendale, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 639
3.

国際会議録
国際会議録
3. Photoluminescence and Electron Paramagnetic Resonance of Nitrogen-Doped Zinc Selenide Epilayers
Moldovan, M. ; Setzler, S. D. ; Yu, Z. ; Myers, T. H. ; Halliburton, L. E. ; Giles, N. C.
出版情報: Defects in electronic materials II : symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A..  pp.555-,  1997.  Pittsburgh, Penn.  MRS - Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 442