1.

国際会議録
国際会議録
1. The Nature of the Shallow Boron Acceptor in SiC - Localization versus Effective Mass Theory
Gerstmann, U. ; Gali, A. ; Deak, P. ; Frauenheim, Th. ; Overhof, H.
出版情報: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.711-714,  2004.  Uetikon-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 457-460
2.

国際会議録
国際会議録
2. A Shallow Acceptor Complex in 4H-SiC: AlSiNCAlSi
Deak, P. ; Aradi, B. ; Gali, A. ; Gerstmann, U. ; Choyke, W.J.
出版情報: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.523-526,  2003.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 433-436