1.

国際会議録
国際会議録
1. Impact of the back-gate bias on the low-frequency noise of partially depleted silicon-on-insulator MOSFETs
Lukyanchikova, N. R. ; Garbar, N. ; Smolanka, A. ; Simoen, E. ; Mercha, A. ; Claeys, C.
出版情報: Noise in devices and circuits II : 26-28 May 2004, Maspalomas, Gran Canaria, Spain.  pp.208-214,  2004.  Bellingham, Wash..  SPIE - The International Society of Optical Engineering
シリーズ名: Proceedings of SPIE - the International Society for Optical Engineering
シリーズ巻号: 5470
2.

国際会議録
国際会議録
2. Evidence for a 'linear kink effect' in ultra-thin gate oxide SOI MOSFETs
Mercha, A. ; Simoen, E. ; Rafi, J.-M. ; Clacys, C. ; Lukyanchikova, N. ; Petrichuk, M. ; Garbar, N.
出版情報: Silicon-on-insulator technology and devices XI : proceedings of the international symposium.  pp.319-324,  2003.  Pennington, N.J..  Electrochemical Society
シリーズ名: Electrochemical Society Proceedings Series
シリーズ巻号: 2003-5
3.

国際会議録
国際会議録
3. Interface defects of the new type detected by the noise method in SOI and SOS MOSFETs
Lukyanchikova, N. ; Petrichuk, M. ; Garbar, N. ; Simoen, E. ; Claeys, C.
出版情報: Proceedings of the Eighth International Symposium on Silicon-on-Insulator Technology and Devices.  pp.203-214,  1997.  Pennington, NJ.  Electrochemical Society
シリーズ名: Electrochemical Society Proceedings Series
シリーズ巻号: 97-23
4.

国際会議録
国際会議録
4. Back-gate induced noise overshoot in partially-depleted SOI MOSFETs
Lukyanchikova, N. ; Garbar, N. ; Smolanka, A. ; Simoen, E. ; Claeys, C.
出版情報: Science and technology of semiconductor-on-insulator structures and devices operating in a harsh environment.  pp.255-260,  2005.  Dordrecht.  Kluwer Academic Publishers
シリーズ名: NATO science series. Series 2, Mathematics, physics and chemistry
シリーズ巻号: 185