1.

国際会議録
国際会議録
1. Defect Generation and Annihilation in 3C-SiC-(001) Homoepitaxial Growth by Sublimation
P. Hens ; J. Müller ; G. Wagner ; R. Liljedahl ; E. Spiecker
出版情報: Silicon carbide and related materials 2012 : selected, peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6,2012, St. Petersburg, Russian Federation.  pp.283-286,  2013.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 740-742
2.

国際会議録
国際会議録
2. Freestanding 3C-SiC Grown by Sublimation Epitaxy Using 3C-SiC Templates on Silicon
P. Hens ; J. Müller ; G. Wagner ; R. Liljedahl ; R. Yakimova
出版情報: Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA.  pp.177-180,  2012.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 717-720
3.

国際会議録
国際会議録
3. Fundamental Study of the Temperature Ramp-Up Influence for 3C-SiC Hetero-Epitaxy on Silicon(100)
P. Hens ; G. Wagner ; A. Hölzing ; R. Hock ; P.J. Wellmann
出版情報: Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009.  pp.151-154,  2010.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 645-648