1.

国際会議録
国際会議録
1. Thermally-Assisted Tunneling Model for 3C-SiC p+-n Diodes
B. Zippelius ; M. Krieger ; H.B. Weber ; G. Pensl ; H. Nagasawa
出版情報: Silicon Carbide and Related Materials 2010 : Selected, peer reviewed papers from the 8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), held in Oslo (Sundvolden Conference Centre), Norway, August 29th - September 2nd.  pp.571-574,  2011.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 679-680
2.

国際会議録
国際会議録
2. Temperature-Dependence of the Leakage Current of 3C-SiC p+-n Diodes Caused by Extended Defects
B. Zippelius ; M. Krieger ; H.B. Weber ; G. Pensl ; H. Nagasawa
出版情報: Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009.  pp.343-346,  2010.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 645-648