1.

国際会議録
国際会議録
1. Deep Level near Ec - 0.55 eV in Undoped 4H-SiC Substrates
Mitchel, W.C. ; Mitchell, W.D. ; Smith, S.R. ; Landis, G. ; Evwaraye, A.O. ; Fang, Z.Q. ; Look, D.C. ; Sizelove, J.R.
出版情報: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.505-508,  2006.  Stafa-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 527-529
2.

国際会議録
国際会議録
2. Deep Traps in High-Ptlrity Semi-Insulating 6H-SiC Substrates: Thermally Stimulated Current Spectroscopy
Fang, Z.Q. ; Claflin, B. ; Look, D.C. ; Polenta, L. ; Chen, J. ; Anderson, T. ; Mitchel, W.C.
出版情報: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.509-512,  2006.  Stafa-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 527-529
3.

国際会議録
国際会議録
3. Trajectory Planning for the Moving Boundary in Three Dimensional DEM Simulations
Hu, G.M. ; Hu, L. ; Zhang, Y. ; Fang, Z.Q.
出版情報: Manufacturing engineering and process II : selected, peer reviewed papers from the ICMEP 2013 International Conference on Manufacturing Engineering and Process, Vancouver, Canada, 13-14 April 2013.  1  pp.192-195,  2013.  Stafa-Zuerich.  Trans Tech Publications
シリーズ名: Applied mechanics and materials
シリーズ巻号: 325-326