1.

国際会議録
国際会議録
1. Evaluation of SiC MESFET Structures Using Large-Signal Time-Domain Simulations
Jonsson, R. ; Eriksson, J. ; Wahab, Q. ; Rudner, S. ; Rorsman, N. ; Zirath, H. ; Svensson, C.
出版情報: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1395-1398,  2002.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 389-393
2.

国際会議録
国際会議録
2. Growth and Characterization of 4H-SiC MESFET Structures Grown by Hot-Wall CVD
Forsberg, U. ; Henry, A. ; Danielsson, Oe. ; Rorsman, N. ; Eriksson, J. ; Wahab, Q. ; Storasta, L. ; Linnarsson, M.K. ; Janzen, E.
出版情報: Silicon carbide--materials, processing and devices : symposium held November 27-29, 2000, Boston, Massachusetts, U.S.A..  2001.  Warrendale, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 640