Presence of Hydrogen in SiC

Presence of Hydrogen in SiC

著者名:

Henry, A.

掲載資料名:

Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000

シリーズ名:

Materials science forum

シリーズ巻号:

353-356

発行年:

2001

開始ページ:

373

終了ページ:

376

総ページ数:

4

出版情報:

Uetikon-Zuerich, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878498734 [0878498737]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013315
シリーズID:	PA00000012
会議名:	ECSCRM : European Conference on Silicon Carbide and Related Materials
回次:	2000 : 3rd
会議開催地:	Benediktinerkloster Banz, Germany
会議開催年:	2000.09.00

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3 国際会議録 Optical Properties of Aluminium and Nitrogen in Compensated 4H-SiC Epitaxial Layers Syvaejaervi, Mikael, Yakimova, Rositza, Kakanakova-georgieva, Anelia, Henry, Anne, Janzen, Erik, Linnarsson, Margareta … Materials Research Society	9 国際会議録 Influence of Gravity on Defect Formation in Homoepitaxial Layers of SiC Grown by Sublimation Yakimova, R., Syvaejaervi, M., Janzen, E., Dedulle, J.-M., Pons, M. ESA Publications Division
4 国際会議録 High Growth Rate Epitaxy of Thick 4H-SiC Layers Syvajarvi, M., Yakimova, R., Jacobsson, H., Linnarsson, M. K., Henry, A., Janzen, E. Trans Tech Publications	10 国際会議録 Incorporation of Hydrogen (1H and 2H) into 4H-SiC during Epitaxial Growth Linnarsson, M.K., Forsberg, U., Janson, M., Janzen, E., Svensson, B.G. Trans Tech Publications
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