1.

国際会議録
国際会議録
1. A Novel Method for Studying Degradation Related to Plasma Processing of Silicon Wafers
Lagowski, J. ; Hoff, A. ; Jastrzebski, L. ; Edelman, P. ; Esry, T.
出版情報: Materials reliability in microelectronics VI : symposium held April 8-12, 1996, San Francisco, California, U.S.A..  pp.437-,  1996.  Pittsburgh, Pa..  MRS - Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 428
2.

国際会議録
国際会議録
2. A New, Real-Time Method for Measuring Mobile Charge and Injected Charge in SiO2 on Si
Edelman, P. ; Lagowski, J. ; Savchouk, A. ; Hoff, A. ; Jastrzebski, L. ; Persson, E.
出版情報: Materials reliability in microelectronics VI : symposium held April 8-12, 1996, San Francisco, California, U.S.A..  pp.443-,  1996.  Pittsburgh, Pa..  MRS - Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 428
3.

国際会議録
国際会議録
3. New surface photovoltage (SPV) method for high precision measurement of the minority carrier diffusion length and surface recombination velocity in silicon wafers
Faifer, V. ; Edelman, P. ; Kontkiewicz, A. ; Lagowski, J. ; Hoff, A. ; Dyukov, V. ; Pravdivtsev, A. ; Kornienko, I.
出版情報: ALTECH 95 : analytical techniques for semiconductor materials and process characterization II : proceedings of the Satellite Symposium to ESSDERC 95, The Hague, The Netherlands.  pp.73-82,  1995.  Pennington, NJ.  Electrochemical Society
シリーズ名: Electrochemical Society Proceedings Series
シリーズ巻号: 95-30