1.

国際会議録
国際会議録
1. Atomistic Model of Transient-Enhanced Diffusion and Clustering of Boron in Silicon
Pelaz, L. ; Gilmer, G. H. ; Jaraiz, M. ; Gossmann, H-J. ; Rafferty, C. S. ; Eaglesham, D. J. ; Poate, J. M.
出版情報: Defects and diffusion in silicon processing : symposium held April 1-4, 1997, San Francisco, California, U.S.A..  pp.341-,  1997.  Pittsburg, Pa..  MRS - Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 469
2.

国際会議録
国際会議録
2. Enhanced Diffusion of Dopants in Vacancy Supersaturation Produced by MeV Implantation
Venezia, V. C. ; Haynes, T. E. ; Agarwal, A. ; Gossmann, H-J. ; Eaglesham, D. J.
出版情報: Defects and diffusion in silicon processing : symposium held April 1-4, 1997, San Francisco, California, U.S.A..  pp.303-,  1997.  Pittsburg, Pa..  MRS - Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 469
3.

国際会議録
国際会議録
3. Temperature- and Time-Dependence of Boron-Enhanced Diffusion from Evaporated- and Ultra-Low Energy Ion-Implanted Layers
Agarwal, A. ; Gossmann, H-J. ; Eaglesham, D. J.
出版情報: Si front-end processing - physics and technology of dopant-defect interactions : symposium held April 6-9, 1999, San Francisco, California, U.S.A..  pp.3-,  1999.  Warrendale, PA.  MRS - Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 568