1.

国際会議録
国際会議録
1. GaN and AIN layers grown by nano epitaxial lateral overgrowth technique on porous substrates
Mynbaeva, M. ; Titkov, A. ; Kryzhanovski, A. ; Zubrilov, A. ; Ratnikov, V. ; Davydov, V. ; Kuznetsov, N. ; Mynbaev, K. ; Stepanov, S. ; Cherenkov, A. ; Kotousova, I. ; Tsvetkov, D. ; Dmitriev, V.
出版情報: GaN and related alloys - 1999 : symposium held November 28-December 3, 1999, Boston, Massachusetts, U.S.A..  pp.W2.7.1-,  2000.  Warrendale, Pa..  MRS-Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 595
2.

国際会議録
国際会議録
2. Silicon Carbide Epitaxial Layers Grown on SiC Wafers With Reduced Micropipe Density
Rendakova, S. ; Kuznetsov, N. ; Savkina, N. ; Rastegaeva, M. ; Andreev, A. ; Minbaeva, M. ; Morozov, A. ; Dmitriev, V.
出版情報: Wide-bandgap semiconductors for high power, high frequency, and high temperature : symposium held April 13-15, 1998, San Francisco, California, U.S.A..  pp.131-,  1998.  Warrendale, Penn..  MRS - Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 512
3.

国際会議録
国際会議録
3. Properties of GaN Homoepitaxial Layers Grown on GaN Epitaxial Wafers
Dmitriev, V. ; Nikolaev, A. ; Cherenkov, A. ; Tsvetkov, D. ; Stepanov, S. ; Kuznetsov, N. ; Nikitina, I. ; Kovarsky, A. ; Yagovkina, M. ; Davidov, V.
出版情報: Wide-bandgap semiconductors for high power, high frequency, and high temperature : symposium held April 13-15, 1998, San Francisco, California, U.S.A..  pp.451-,  1998.  Warrendale, Penn..  MRS - Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 512
4.

国際会議録
国際会議録
4. 4H-SiC CVD Epitaxial Layers with Improved Structural Quality Grown on SiC Wafers with Reduced Micropipe Density
Kalinina, E. V. ; Zubrilov, A. ; Solov'ev, V. ; Kuznetsov, N. ; Hallen, A. ; Konstantinov, A. ; Karlsson, S. ; Rendakova, S. ; Dmitriev, V.
出版情報: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.505-508,  2000.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 338-342(1)
5.

国際会議録
国際会議録
5. 4H-SiC pn Diode Grown by LPE Method for High-Power Applications
Kuznetsov, N. ; Bauman, D. ; Gavrilin, A. ; Kassamakova, L. ; Kakanakov, R. ; Sarov, G. ; Cholakova, T. ; Zekentes, K. ; Dmitriev, V.
出版情報: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.867-870,  2003.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 433-436
6.

国際会議録
国際会議録
6. 4H-SiC Layers Grown by Liquid Phase Epitaxy on 4H-SiC Off-Axis Substrates
Kuznetsov, N. ; Morozov, A. ; Baumann, D. ; Ivantsov, V. ; Sukhoveev, V. ; Nikitina, I. ; Zubrilov, A. ; Rendakova, S. ; Dmitriev, V. ; Hofman, D. ; Masri, P.
出版情報: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.229-232,  2000.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 338-342(1)